FSD156MRBN Datasheet PDF - Fairchild Semiconductor

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FSD156MRBN
Fairchild Semiconductor

Part Number FSD156MRBN
Description Green-Mode Fairchild Power Switch
Page 16 Pages


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October 2011
FSD156MRBN
Green-Mode Fairchild Power Switch (FPS™)
Features
Advanced Soft Burst-Mode Operation for
Low Standby Power and Low Audible Noise
Random Frequency Fluctuation (RFF) for Low EMI
Pulse-by-Pulse Current Limit
Various Protection Functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD) with Hysteresis, Output-Short
Protection (OSP), and Under-Voltage Lockout
(UVLO) with Hysteresis
Low Operating Current (0.4mA) in Burst Mode
Internal Startup Circuit
Internal High-Voltage SenseFET: 650V
Built-in Soft-Start: 15ms
Auto-Restart Mode
Applications
Power Supply for LCD Monitor, STB, and DVD
Combination
Description
The FSD156MRBN is an integrated Pulse Width
Modulation (PWM) controller and SenseFET specifically
designed for offline Switch-Mode Power Supplies
(SMPS) with minimal external components. The PWM
controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout (UVLO), Leading-
Edge Blanking (LEB), optimized gate driver, internal
soft-start, temperature-compensated precise current
sources for loop compensation, and self-protection
circuitry. Compared with a discrete MOSFET and PWM
controller solution, the FSD series can reduce total cost,
component count, size, and weight; while
simultaneously increasing efficiency, productivity, and
system reliability. This device provides a basic platform
suited for cost-effective design of a flyback converter.
Ordering Information
Output Power Table(2)
Part
Number
Package
Operating
Junction
Temperature
Current
Limit
RDS(ON)
(Max.)
230VAC ±15%(3)
85-265VAC
Adapter(4)
Open
Frame(5)
Adapter(4)
Open
Frame(5)
Replaces
Device
FSD156MRBN 8-DIP
-40°C ~
+125°C
1.60A 2.3
26W
40W
20W
30W
FSFM300N
FSGM300
Notes:
1. Lead-free package per JEDEC J-STD-020B.
2. The junction temperature can limit the maximum output power.
3. 230VAC or 100/115VAC with voltage doubler.
4. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient temperature.
5. Maximum practical continuous power in an open-frame design at 50C ambient temperature.
© 2011 Fairchild Semiconductor Corporation
FSD156MRBN • Rev. 1.0.0
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/



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Application Circuit
Figure 1. Typical Application Circuit
Internal Block Diagram
© 2011 Fairchild Semiconductor Corporation
FSD156MRBN • Rev. 1.0.0
Figure 2. Internal Block Diagram
2
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Pin Configuration
1. GND
2. VCC
3. FB
FSD156MRBN
4. N.C.
8. Drain
7. Drain
6. Drain
5. Drain
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
1
2
3
4
5, 6, 7, 8
Name
GND
VCC
FB
NC
Drain
Description
Ground. This pin is the control ground and the SenseFET source.
Power Supply. This pin is the positive supply input, which provides the internal operating
current for both startup and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator.
The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor
should be placed between this pin and GND. If the voltage of this pin reaches 7.0V, the
overload protection triggers, which shuts down the FPS™.
No Connection
SenseFET Drain. High-voltage power SenseFET drain connection.
© 2011 Fairchild Semiconductor Corporation
FSD156MRBN • Rev. 1.0.0
3
www.fairchildsemi.com
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VDS Drain Pin Voltage
VCC VCC Pin Voltage
VFB Feedback Pin Voltage
IDM Drain Current Pulsed
IDS Continuous Switching Drain Current(6)
EAS Single Pulsed Avalanche Energy(7)
PD Total Power Dissipation (TC=25C)(8)
Maximum Junction Temperature
TJ Operating Junction Temperature(9)
TC=25C
TC=100C
-0.3
-40
650
26
10.0
4
1.9
1.27
190
1.5
150
+125
V
V
V
A
A
A
mJ
W
C
C
TSTG
ESD
Storage Temperature
Electrostatic
Human Body Model, JESD22-A114
Discharge Capability Charged Device Model, JESD22-C101
-55
+150
5
2
C
kV
Notes:
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.73)
and junction temperature (see Figure 4).
7. L=45mH, starting TJ=25C.
8. Infinite cooling condition (refer to the SEMI G30-88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
Figure 4. Repetitive Peak Switching Current
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol
Parameter
Value
Unit
θJA Junction-to-Ambient Thermal Impedance(10)
ΨJL Junction-to-Lead Thermal Impedance(11)
85 °C/W
11 °C/W
Notes:
10. JEDEC recommended environment, JESD51-2, and test board, JESD51-10, with minimum land pattern.
11. Measured on the SOURCE pin #7, close to the plastic interface.
© 2011 Fairchild Semiconductor Corporation
FSD156MRBN • Rev. 1.0.0
4
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/



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