FR18N15D Datasheet PDF - International Rectifier


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FR18N15D
International Rectifier

Part Number FR18N15D
Description IRFR18N15D
Page 10 Pages

FR18N15D datasheet pdf
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PD- 93815A
SMPS MOSFET
IRFR18N15D
IRFU18N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.125
ID
18A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR18N15D IRFU18N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
18
13
72
110
0.71
± 30
3.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
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Notes  through † are on page 10
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2/23/00



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IRFR18N15D/IRFU18N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ. Max. Units
––– ––– V
0.17 ––– V/°C
––– 0.125
––– 5.5 V
––– 25 µA
––– 250
––– 100
nA
––– -100
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA †
VGS = 10V, ID = 11A „
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
4.2 ––– –––
Qg Total Gate Charge
––– 28 43
Qgs Gate-to-Source Charge
––– 7.6 11
Qgd Gate-to-Drain ("Miller") Charge
––– 14 21
td(on)
Turn-On Delay Time
––– 8.8 –––
tr Rise Time
––– 25 –––
td(off)
Turn-Off Delay Time
––– 15 –––
tf Fall Time
––– 9.8 –––
Ciss Input Capacitance
––– 900 –––
Coss
Output Capacitance
––– 190 –––
Crss Reverse Transfer Capacitance
––– 49 –––
Coss
Output Capacitance
––– 1160 –––
Coss
Output Capacitance
––– 88 –––
Coss eff. Effective Output Capacitance
––– 95 –––
Avalanche Characteristics
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 11A
ID = 11A
VDS = 120V
VGS = 10V, „
VDD = 75V
ID = 11A
RG = 6.8
VGS = 10V „
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
200
11
11
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
––– 1.4
––– 50 °C/W
––– 110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 18
––– ––– 72
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
www.DataSheetV4USD.com Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V „
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
––– 130 190 ns TJ = 25°C, IF = 11A
––– 660 980 nC di/dt = 100A/µs „
ton Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFR18N15D/IRFU18N15D
100
10
VGS
TOP
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
6.0V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
6.0V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 175 °C
10
TJ = 25 °C
1
6
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V DS= 50V
20µs PULSE WIDTH
7 8 9 10 11
VGS , Gate-to-Source Voltage (V)
12
Fig 3. Typical Transfer Characteristics
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3.0 ID = 18A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3



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IRFR18N15D/IRFU18N15D
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 11A
16
12
VDS = 120V
VDS = 75V
VDS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 175° C
1
TJ = 25 ° C
0.1
0.2
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VGS = 0 V
0.5 0.8 1.1
VSD ,Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
TC = 25 °C
TJ = 175°C
Single Pulse
1
1
10
1ms
10ms
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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