FQPF2N80YDTU Datasheet PDF - Fairchild Semiconductor

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FQPF2N80YDTU
Fairchild Semiconductor

Part Number FQPF2N80YDTU
Description MOSFET
Page 9 Pages


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FQPF2N80YDTU
N-Channel QFET® MOSFET
80 V, 1.5 A, 
July 2013
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
1.5 A, 80 V, RDS(on)=(Max.)@VGS=10 V, ID=0.75 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF2N80YDTU
800
1.5
0.95
6.0
± 30
5.2
1.5
3.5
4.0
35
0.28
-55 to +150
300
FQPF2N80YDTU
3.57
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2013 Fairchild Semiconductor Corporation
FQPF2N80YDTU Rev. C1
www.fairchildsemi.com



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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
--
0.9
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 0.75 A
VDS = 50 V, ID = 0.75 A
3.0 --
-- 4.9
-- 2.2
5.0
6.3
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 425 550
-- 45
60
-- 5.5 7.0
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 2.4 A,
RG = 25
-- 12
-- 30
-- 25
35
70
60
(Note 4)
--
28
65
VDS = 640 V, ID = 2.4 A,
-- 12
15
VGS = 10 V
-- 2.6
--
(Note 4) --
6.0
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.4 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.3mH, IAS = 1.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
-- -- 1.5
-- -- 6.0
-- -- 1.4
-- 480
--
-- 2.0
--
A
A
V
ns
µC
©2013 Fairchild Semiconductor Corporation
FQPF2N80YDTU Rev. C1
www.fairchildsemi.com



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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
V = 10V
GS
8
V = 20V
GS
6
4
Note : T = 25
J
2
0123456
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
oss
Notes :
1. V = 0 V
GS
2. f = 1 MHz
C
rss
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2013 Fairchild Semiconductor Corporation
FQPF2N80YDTU Rev. C1
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 50V
2. 250μs Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150
25
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 160V
DS
10 V = 400V
DS
VDS = 640V
8
6
4
2
Note : ID = 2.4A
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101 is Limited by R DS(on)
100μs
1 ms
10 ms
100 100 ms
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 1.2 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
1.6
1.2
0.8
0.4
0.0
25
50 75 100 125
TC, Case Temperature []
150
Figure 10. Maximum Drain Current
vs Case Temperature
100
1 0 -1
D =0.5
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
1 0 -5
N ote s :
1.
Z
θ
(t)
JC
=
3.57
/W
M ax.
2. D u ty F actor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
s in g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FQPF2N80YDTU Rev. C1
www.fairchildsemi.com



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