FP7G75US60 Datasheet PDF - Fairchild Semiconductor

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FP7G75US60
Fairchild Semiconductor

Part Number FP7G75US60
Description Transfer Molded Type IGBT Module
Page 10 Pages


FP7G75US60 datasheet pdf
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FP7G75US60
Transfer Molded Type IGBT Module
General Description
Fairchild’s New IGBT Modules ( Transfer Molded Type ) provide
low conduction and switching losses as well as short circuit
ruggedness. They are designed for applications such as Motor
control, Uninterrupted Power Supplies (UPS) and general
Inverters where short circuit ruggedness is a required feature.
Features
• Short Circuit rated 10us @Tc=100°C, Vge=15V
• High Speed Switching
• Low Saturation Voltage : Vce(sat) =2.2V @Ic=75A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• Welders
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
July 2008
Power-SPMTM
tm
Package Code : EPM7
1
32
45
67
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
Rating
600
± 20
75
150
75
150
10
310
-40 to +125
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
©2008 Fairchild Semiconductor Corporation
FP7G75US60 Rev. A
1
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Pin Configuration and Pin Description
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Top View
1
32
45
67
Internal Circuit Diagram
Pin Number
1
2
3
4
5
6
7
Pin Description
Pin Description
Emitter of Q1, IGBT,
Collector of Q2, IGBT
Emitter of Q2, IGBT
Collector of Q1, IGBT
Gate of Q1, IGBT
Emitter of Q1, IGBT
Gate of Q2, IGBT
Emitter of Q2, IGBT
FP7G75US60 Rev. A
2
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Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
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Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
VGE= 0V, IC = 250µA
Temperature Coeff. of Breakdown Voltage VGE= 0V, IC = 1mA
Collector Cut-off Current
Gate-Emitter Leakage Current
VCE= VCES, VGE= 0V
VGE= VGES, VCE= 0V
600 -
-
V
- 0.6 -
V
- - 250 uA
- - ± 100 nA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
VGE = 0V, IC=75mA
IC = 75A, VGE = 15V
5.0 6.0 8.5
- 2.2 2.8
V
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
- 4515 -
- 550 --
- 100 -
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 300 V, IC = 75A,
RG = 3.3, VGE = 15V
Inductive Load, TC = 25°C
VCC = 300 V, IC = 75A,
RG = 3.3, VGE = 15V
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V @ TC = 100°C
VCE = 300 V, IC = 75A, VGE = 15V
- 33
- 29
- 92
- 91
- 0.75
- 0.72
- 1.47
- 27
- 22
- 96
- 197
- 0.73
- 1.47
- 2.2
10 -
- 205
- 40
- 115
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
FP7G75US60 Rev. A
3
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Electrical Characteristics of DIODE (TJ = 25°C, Unless Otherwise Specified)
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Symbol
Parameter
Conditions
VFM Diode Forward Voltage
IF = 75A
TC = 25°C
TC = 100°C
trr Diode Reverse Recovery Time
TC = 25°C
TC = 100°C
Irr
Diode Peak Reverse Recovery Current
IF = 75A
di / dt = 150 A/us
TC = 25°C
TC = 100°C
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 100°C
Min Typ Max Units
- 1.9 2.8
- 1.8 -
V
- 78 112
- 156
ns
- 5.7 7.5
- 10
A
- 222
- 780
nC
Thermal Characteristics
Symbol
Parameter
RθJC
RθJC
RθCS
Weight
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
Typ.
-
-
0.05
-
Max.
0.32
0.9
-
90
Units
°C/W
°C/W
°C/W
g
FP7G75US60 Rev. A
4
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FP7G75US60 datasheet pdf
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FP7G75US60 Transfer Molded Type IGBT Module FP7G75US60
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