FDPF4N60NZ Datasheet PDF - Fairchild Semiconductor

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FDPF4N60NZ
Fairchild Semiconductor

Part Number FDPF4N60NZ
Description MOSFET
Page 10 Pages


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FDPF4N60NZ
N-Channel UniFETTM II MOSFET
600 V, 3.8 A, 2.5 Ω
Features
• RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A
• Low Gate Charge (Typ. 8.3 nC)
• Low Crss (Typ. 3.7 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2011 Fairchild Semiconductor Corporation
FDPF4N60NZ Rev. C1
1
FDPF4N60NZ
600
±25
3.8*
2.3*
15*
223.8
3.8
8.9
10
28
0.22
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF4N60NZ
4.5
62.5
Unit
oC/W
www.fairchildsemi.com



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Package Marking and Ordering Information
Part Number
FDPF4N60NZ
Top Mark
FDPF4N60NZ
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TC = 125oC
VGS = ±25 V, VDS = 0 V
600
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 1.9 A
VDS = 20 V, ID = 1.9 A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V ID = 3.8 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 3.8 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 3.8 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 3.8 A,
dIF/dt = 100 A/μs
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.9
3.3
385
40
3.7
8.3
2.1
3.3
12.7
15.1
30.2
12.8
-
-
-
168
0.7
Max. Unit
-V
- V/oC
1
10
μA
±10 μA
5.0 V
2.5 Ω
-S
510
60
5
10.8
-
-
pF
pF
pF
nC
nC
nC
35.4
40.2
70.4
35.6
ns
ns
ns
ns
3.8* A
15 A
1.4 V
- ns
- μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 31 mH, IAS = 3.8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 3.8 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDPF4N60NZ Rev. C1
2
www.fairchildsemi.com



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Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
10
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
1
0.1
0.02
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10
VDS, Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0.0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
1.5 3.0 4.5 6.0 7.5 9.0
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
700
Ciss
100
Coss
10
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss
Crss = Cgd
1
0.1
1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
10
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
1 25oC
-55oC
0.1
2
46
VGS, Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
40
10
150oC
25oC
1
0.1
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.8 1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8 VDS = 300V
VDS = 480V
6
4
2
0 *Note: ID = 3.8A
0.0 1.5 3.0 4.5 6.0 7.5 9.0
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDPF4N60NZ Rev. C1
3
www.fairchildsemi.com



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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
30
10μs
10
100μs
1
Operation in This Area
is Limited by R DS(on)
1ms
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
Figure 11. Unclamped Inductive
Switching Capability
5
1000
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 1.9A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
4
VGS = 10V
3
2
1
RθJC = 4.5oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
TJ = 125 oC
TJ = 25 oC
1
0.01
0.1
tAV, TIME IN AVALANCHE (ms)
1
©2011 Fairchild Semiconductor Corporation
FDPF4N60NZ Rev. C1
4
www.fairchildsemi.com



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