FDPF17N60NT Datasheet PDF - Fairchild Semiconductor

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FDPF17N60NT
Fairchild Semiconductor

Part Number FDPF17N60NT
Description MOSFET
Page 9 Pages


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FDPF17N60NT
N-Channel UniFETTM II MOSFET
600 V, 17 A, 340 mΩ
Features
• RDS(on) = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
December 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-
state resistance among the planar MOSFET, and also provides
superior switching performance and higher avalanche energy
strength. In addition, internal gate-source ESD diode allows
UniFET II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel
display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
1
FDPF17N60NT
600
±30
17*
10.2*
68*
838
17
24.5
10
62.5
0.5
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF17N60NT
2.0
62.5
Unit
oC/W
www.fairchildsemi.com



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Package Marking and Ordering Information
Part Number
FDPF17N60NT
Top Mark
FDPF17N60NT
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V,TC = 150oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 8.5 A
VDS = 20 V, ID = 8.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V ID = 17 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 17 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 17 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 17 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.8 mH, IAS = 17 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 17 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
600
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.8
-
-
-
-
0.29
21
2285
310
23
48
13
20
48
79
128
62
-
-
-
575
7.2
Max. Unit
-
-
1
10
±100
V
V/oC
μA
nA
5.0 V
0.34 Ω
-S
3040
410
35
65
-
-
pF
pF
pF
nC
nC
nC
106 ns
168 ns
266 ns
134 ns
74 A
68 A
1.4 V
- ns
- μC
©2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
2
www.fairchildsemi.com



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Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10 5.5 V
5.0 V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
0.1
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
0.5
0.4
VGS = 10V
VGS = 20V
0.3
0.2
0
*Note: TC = 25oC
10 20 30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
10000
Ciss
1000
Coss
*Note:
100 1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1
10
VDS, Drain-Source Voltage [V]
Crss
30
Figure 2. Transfer Characteristics
100
150oC
10
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
456789
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1
0.2 0.4
2. 250μs Pulse Test
0.8 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
0 *Note: ID = 17A
0 10 20 30 40 50
Qg, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
3
www.fairchildsemi.com



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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.18
1.15
1.10
1.05
1.00
0.95
0.90
*Notes:
1. VGS = 0V
2. ID = 250μA
0.85
-75 -50 0 50 100
TJ, Junction Temperature [oC]
150
Figure 9. Maximum Safe Operating Area
200
100 10μs
100μs
10 1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1 10
100
VDS, Drain-Source Voltage [V]
1000
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5 *Notes:
1. VGS = 10V
2. ID = 8.5A
0.0
-75 -50
0
50 100 150
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01 Single pulse
0.003
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 2.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
tR1,eRcteacntagnuglualraPr PuulslseeDDuurraattiioonn [[sseecc]]
10 102
©2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
4
www.fairchildsemi.com



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