FDP5N50U Datasheet PDF - Fairchild Semiconductor

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FDP5N50U
Fairchild Semiconductor

Part Number FDP5N50U
Description N-Channel MOSFET
Page 10 Pages


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FDP5N50U / FDPF5N50UT
N-Channel MOSFET, FRFET
500V, 4A, 2.0
Features
• RDS(on) = 1.65( Typ.)@ VGS = 10V, ID = 2A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November2009
Ultra FRFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
(potted)
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50U FDPF5N50UT
500
±30
4 4*
2.4 2.4*
16 16*
216
4
8.5
4.5
85 28
0.67 0.22
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50U
1.4
0.5
62.5
FDPF5N50UT
4.5
-
62.5
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDP5N50U / FDPF5N50UT Rev. A-1
1
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP5N50U
Device
FDP5N50U
Package
TO-220
Reel Size
-
Tape Width
-
FDPF5N50UT
FDPF5N50UT
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 2A
VDS = 40V, ID = 2A
(Note 4)
3
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 4A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 4A
RG = 25
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 4A
dIF/dt = 100A/s
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 27mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.7
-
-
-
-
1.65
4.8
485
65
5
11
3
5
14
21
27
20
-
-
-
36
33
Max. Units
-
-
25
250
±100
V
V/oC
A
nA
5V
2
-S
650 pF
90 pF
8 pF
15 nC
- nC
- nC
38 ns
52 ns
64 ns
50 ns
4A
16 A
1.6 V
- ns
- nC
FDP5N50U / FDPF5N50UT Rev. A-1
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
1 5.5 V
0.1
0.02
0.1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1 10
VDS,Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.6
2.2
VGS = 10V
VGS = 20V
1.8
1.4
0
*Note: TJ = 25oC
6 12
ID, Drain Current [A]
18
Figure 5. Capacitance Characteristics
1000
800
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
400 Coss
200
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
10
150oC
25oC
1
0.1
4
*Notes:
1. VDS = 20V
2. 250s Pulse Test
567
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30
150oC
10
25oC
*Notes:
1. VGS = 0V
2. 250s Pulse Test
1
0.4 1.0 1.6 2.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
*Note: ID = 4A
0
0 4 8 12
Qg, Total Gate Charge [nC]
FDP5N50U / FDPF5N50UT Rev. A-1
3
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-75
*Notes:
1. VGS = 0V
2. ID = 250A
-25 25 75 125
TJ, Junction Temperature [oC]
175
Figure 8. Maximum Safe Operating Area
- FDP5N50U
30
50s
10 100s
1ms
10ms
1 DC
Operation in This Area
is Limited by R DS(on)
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Safe Operating Area
- FDPF5N50UT
30
30s
10 100s
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 10. Maximum Drain Current
vs. Case Temperature
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve - FDP5N50U
3
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
100
101
FDP5N50U / FDPF5N50UT Rev. A-1
4
www.fairchildsemi.com



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