FDME1024NZT Datasheet PDF - Fairchild Semiconductor


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FDME1024NZT
Fairchild Semiconductor

Part Number FDME1024NZT
Description Dual N-Channel Power Trench MOSFET
Page 7 Pages

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December 2009
FDME1024NZT
Dual N-Channel Power Trench® MOSFET
20 V, 3.4 A, 66 m
Features
„ Max rDS(on) = 66 mat VGS = 4.5 V, ID = 3.4 A
„ Max rDS(on) = 86 mat VGS = 2.5 V, ID = 2.9 A
„ Max rDS(on) = 113 mat VGS = 1.8 V, ID = 2.5 A
„ Max rDS(on) = 160 mat VGS = 1.5 V, ID = 2.1 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 1600V (Note3)
„ RoHS Compliant
General Description
This device is designed specifically as a single package solution
for dual switching requirement in cellular handset and other ultra-
portable applications. It features two independent N-Channel
MOSFETs with low on-state resistance for minimum conduction
losses.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ Baseband Switch
„ Load Switch
G1
S1
D2
Pin 1
D1
D2
S2
G2
D1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
3.4
6
1.3
0.6
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
95
210
°C/W
Device Marking
4T
Device
FDME1024NZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2009 Fairchild Semiconductor Corporation
FDME1024NZT Rev.C
1
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
20
V
ID = 250 µA, referenced to 25 °C
16 mV/°C
VDS = 16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
0.4 0.7 1.0
V
ID = 250 µA, referenced to 25 °C
-3 mV/°C
VGS = 4.5 V, ID = 3.4 A
VGS = 2.5 V, ID = 2.9 A
VGS = 1.8 V, ID = 2.5 A
VGS = 1.5 V, ID = 2.1 A
VGS = 4.5 V, ID = 3.4 A, TJ = 125 °C
VDD = 4.5 V, ID = 3.4 A
55 66
68 86
85 113 m
106 160
76 112
9S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
225 300 pF
40 55 pF
25 40 pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDD = 10 V, ID = 3.4 A,
VGS = 4.5 V
4.5 10 ns
2 10 ns
15 27 ns
1.7 10 ns
3 4.2 nC
0.4 nC
0.6 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 0.9 A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 3.4 A, di/dt = 100 A/µs
0.7 1.2
V
8.5 17 ns
1.4 10 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 95 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 210 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
FDME1024NZT Rev.C
2
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Typical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = 4.5 V
VGS = 3 V
VGS = 2.5 V
VGS = 1.8 V
4
VGS = 1.5 V
2
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.0 0.5 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.5
3.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
2.5
2.0 VGS = 1.5 V
VGS = 1.8 V
1.5
VGS = 2.5 V VGS = 3 V
1.0
VGS = 4.5 V
0.5
0
24
ID, DRAIN CURRENT (A)
6
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 3.4 A
VGS = 4.5 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
300
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
250
ID = 3.4 A
200
150
TJ = 125 oC
100
50
0
1.0
TJ = 25 oC
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VDS = 5 V
4
TJ = 150 oC
2
TJ = 25 oC
TJ = -55 oC
0
0.0 0.5 1.0 1.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
2.0
10
VGS = 0 V
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
FDME1024NZT Rev.C
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Typical Characteristics TJ = 25 °C unless otherwise noted
4.5
ID = 3.4 A
VDD = 8 V
3.0
VDD = 10 V
VDD = 12 V
1.5
0.0
0
12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3
500
Ciss
100
Coss
f = 1 MHz
Crss
VGS = 0 V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. Capacitance vs Drain
to Source Voltage
20
10
100 µs
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1 SINGLE PULSE
TJ = MAX RATED
RθJA = 210 oC/W
TA = 25 oC
0.01
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
10 ms
100 ms
1s
10 s
DC
50
Figure 9. Forward Bias Safe Operating Area
10-1
10-2 VGS = 0 V
10-3
10-4
10-5 TJ = 125 oC
10-6
10-7
10-8 TJ = 25 oC
10-9
0 3 6 9 12
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Gate Leakage Current vs
Gate to Source Voltage
15
100
SINGLE PULSE
RθJA = 210 oC/W
TA = 25 oC
10
1
0.5
10-4
FDME1024NZT Rev.C
10-3
10-2
10-1
1
t, PULSE WIDTH (s)
10
Figure 11. Single Pulse Maximum Power Dissipation
100
1000
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