| Part Number | FDMA910PZ |
| Manufacturer | Fairchild Semiconductor |
| Title | MOSFET |
| Description | Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID =... |
| Features |
General Description
Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A
Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A
Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
This device is designed specifically for battery charge or... |
| Published | Jan 10, 2017 |
| Datasheet |
 FDMA910PZ File
|
| Part Number | FDMA910PZ |
| Manufacturer | ON Semiconductor |
| Title | P-Channel MOSFET |
| Description | This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a . |
| Features |
a MOSFET with low on−state resistance and zener diode protection against ESD. The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
• Max rDS(on) = 20 mW at VGS = −4.5 V, ID = −9.4 A • Max rDS(on) = 24 mW at VG. |
| Datasheet |
FDMA910PZ File
|
