FDFME2P823ZT Datasheet PDF - Fairchild Semiconductor


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FDFME2P823ZT
Fairchild Semiconductor

Part Number FDFME2P823ZT
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Page 9 Pages

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FDFME2P823ZT
July 2010
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-20 V, -2.6 A, 142 mΩ
Features
General Description
„ Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
„ Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
„ Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
„ Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Schottky: VF < 0.57 V @ 1A
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 1600 V (Note 3)
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable appliacrions. It features as MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum condution losses.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ Battery Charging
„ DC-DC Conversion
Pin 1
NC
A
D
K
D
S
G
K
A1
NC 2
D3
6K
5G
4S
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
VRRM
IO
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Schottky Repetitive Peak Reverse Voltage
TA = 25 °C
TA = 25 °C
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-20
±8
-2.6
-6
1.4
0.6
28
1
-55 to +150
Units
V
V
A
W
V
A
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
90
195
110
234
°C/W
Device Marking
3T
Device
FDFME2P823ZT
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com



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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
-20
V
ID = -250 μA, referenced to 25 °C
-12 mV/°C
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1 μA
±10 μA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 μA
-0.4 -0.6 -1.0
V
ID = -250 μA, referenced to 25 °C
2 mV/°C
VGS = -4.5 V, ID = -2.3 A
VGS = -2.5 V, ID = -1.8 A
VGS = -1.8 V, ID = -1.5 A
VGS = -1.5 V, ID = -1.2 A
VGS = -4.5 V, ID = -2.3 A,
TJ = 125 °C
VDS = -4.5 V, ID = -2.3 A
95 142
120 213
150 331 mΩ
190 530
128 190
7S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
305 405
55 75
50 75
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -10 V, ID = -2.3 A,
VGS = -4.5 V
4.7 10 ns
4.8 10 ns
33 53 ns
16 29 ns
5.5 7.7 nC
0.6 nC
1.4 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -0.9 A
(Note 2)
IF = -2.3 A, di/dt = 100 A/μs
-0.8 -1.2
16 29
4.4 10
V
ns
nC
Schottky Diode Characteristics
IR Reverse Leakage
VF Forward Voltage
VF Forward Voltage
VR = 28 V
IF = 1 A
IF = 500 mA
TJ = 25 °C
TJ = 85 °C
TJ = 25 °C
TJ = 85 °C
TJ = 25 °C
TJ = 85 °C
15
0.46
0.47
0.45
0.38
0.33
100
4.7
0.57
0.48
μA
mA
V
V
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
2
www.fairchildsemi.com



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Electrical Characteristics
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) MOSFET RθJA = 90 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB.
(b) MOSFET RθJA = 195 °C/W when mounted on a minimum pad of 2 oz copper.
(c) Schottky RθJA = 110 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB.
(d) Schottky RθJA = 234 °C/W when mounted on a minimum pad of 2 oz copper.
a. 90 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.
c. 110 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
d. 234 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
4. Rating is applicable to MOSFET only.
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
3
www.fairchildsemi.com



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Typical Characteristics TJ = 25°C unless otherwise noted
6
VGS = -4.5 V
VGS = -3 V
4
VGS = -2.5 V
VGS = - 1.8 V
2
VGS = -1.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0 0.5 1.0 1.5 2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
3
VGS = -1.5 V
2 VGS = -1.8 V
VGS = -2.5 V VGS = -3 V
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
0
024
-ID, DRAIN CURRENT (A)
6
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -2.3 A
VGS = -4.5 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
500
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
400
ID = -2.3 A
300
200 TJ = 125 oC
100
0
1.0
TJ = 25 oC
1.5 2.0 2.5 3.0 3.5 4.0
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 4. On-Resistance vs Gate to
Source Voltage
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VDS = -5 V
4
TJ = 150 oC
2
TJ = 25 oC
TJ = -55 oC
0
0.0 0.5 1.0 1.5 2.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
VGS = 0 V
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
4
www.fairchildsemi.com




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