FCPF850N80Z Datasheet PDF - Fairchild Semiconductor

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FCPF850N80Z
Fairchild Semiconductor

Part Number FCPF850N80Z
Description MOSFET
Page 9 Pages


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August 2015
FCPF850N80Z
N-Channel SuperFET® II MOSFET
800 V, 8 A, 850 mΩ
Features
• Typ. RDS(on) = 710 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 22 nC)
• Low Eoss (Typ. 2.3 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress. Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCPF850N80Z Rev. 1.2
1
FCPF850N80Z
800
±20
±30
8.0*
5.1*
18*
114
1.2
0.284
100
20
28.4
0.24
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF850N80Z
4.4
62.5
Unit
oC/W
www.fairchildsemi.com



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Package Marking and Ordering Information
Part Number
FCPF850N80Z
Top Mark
FCPF850N80Z
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25°C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V,TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.6 mA
VGS = 10 V, ID = 3 A
VDS = 20 V, ID = 3 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 6 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
800
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 6 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 6 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 1.2 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8 A, di/dt 200 A/μs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.8
-
-
-
-
710
3.5
990
28
0.74
15
106
22
5
8.6
2.4
16
10
40
4.5
-
-
-
318
4.5
Max. Unit
-V
- V/oC
25
250
μA
±10 μA
4.5 V
850 mΩ
-S
1315
37
-
-
-
29
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
42 ns
30 ns
90 ns
19 ns
8A
18 A
1.2 V
- ns
- μC
©2014 Fairchild Semiconductor Corporation
FCPF850N80Z Rev. 1.2
2
www.fairchildsemi.com



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Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 20.0V
10.0V
8.0V
10 7.0V
6.5V
6.0V
5.5V
Figure 2. Transfer Characteristics
20
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
10
150oC
25oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.50 *Note: TC = 25oC
1.25
1.00
VGS = 10V
0.75
VGS = 20V
0.50
0
3 6 9 12 15 18
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
Ciss
100
Coss
10 *Note:
1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1
10 100
VDS, Drain-Source Voltage [V]
1000
-55oC
1
4567
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
10
150oC
25oC
1
0.1 0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 6A
8 VDS = 160V
VDS = 400V
6 VDS = 640V
4
2
0
0 6 12 18 24
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCPF850N80Z Rev. 1.2
3
www.fairchildsemi.com



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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
1.1
1.0
0.9
Figure 8. On-Resistance Variation
vs. Temperature
3.0
*Notes:
1. VGS = 10V
2.4 2. ID = 3A
1.8
1.2
0.6
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
100
10μs
10 100μs
1ms
1 10ms
Operation in This Area
is Limited by R DS(on)
DC
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01 1
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
6
0.0
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [oC]
4
2
0
0 200 400 600 800
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCPF850N80Z Rev. 1.2
4
www.fairchildsemi.com



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