FCPF4300N80Z Datasheet PDF - Fairchild Semiconductor

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FCPF4300N80Z
Fairchild Semiconductor

Part Number FCPF4300N80Z
Description MOSFET
Page 9 Pages


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August 2015
FCPF4300N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.2 A, 4.3 Ω
Features
• RDS(on) = 3.4 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 6.8 nC)
• Low Eoss (Typ. 0.8 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
1
S
FCPF4300N80Z
800
±20
±30
2.2*
1.4*
3.2*
8.2
0.32
0.19
100
20
19.2
0.15
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF4300N80Z
6.5
62.5
Unit
oC/W
www.fairchildsemi.com



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Package Marking and Ordering Information
Part Number
FCPF4300N80Z
Top Mark
FCPF4300N80Z
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25°C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
800
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.16 mA
VGS = 10 V, ID = 0.8 A
VDS = 20 V, ID = 0.8 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 1.6 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 1.6 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 1.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 1.6 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 0.32 A, RG = 25 Ω, starting TJ = 25°C
3. ISD 2.2 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristic.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.85
-
-
-
-
3.4
0.52
267
12
0.78
6.2
36
6.8
1.38
3.0
2.9
10
6.5
21
16
-
-
-
209
1.2
Max.
-
-
25
250
±10
4.5
4.3
-
355
16
-
-
-
8.8
-
-
-
30
23
52
42
2.2
3.2
1.2
-
-
Unit
V
V/oC
μA
μA
V
Ω
S
pF
pF
pF
pF
pF
nC
nC
nC
Ω
ns
ns
ns
ns
A
A
V
ns
μC
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
2
www.fairchildsemi.com



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Typical Performance Characteristics
Figure 1. On-Region Characteristics
4
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
1
5.5V
5.0V
0.1
0.3
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10
VDS, Drain-Source Voltage[V]
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
*Note: TC = 25oC
7
6
5 VGS = 10V
4
VGS = 20V
3
2
01234
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
100
Ciss
10 *Note:
Coss
1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
10
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
150oC
25oC
-55oC
0.1
2
3456
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
20
10 *Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
150oC
0.1
0.01
25oC
0.001
0.0
0.3 0.6 0.9 1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
*Note: ID = 1.6A
8 VDS = 160V
VDS = 400V
6 VDS = 640V
4
2
00 2 4 6 8
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
3
www.fairchildsemi.com



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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
10
10μs
100μs
1
1ms
Operation in This Area
10ms
0.1 is Limited by R DS(on)
*Notes:
DC
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01 1
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
2.4
Figure 8. On-Resistance Variation
vs. Temperature
2.8
*Notes:
1. VGS = 10V
2.4 2. ID = 0.8A
2.0
1.6
1.2
0.8
0.4
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC, Case Temperature [oC]
150
1.8
1.2
0.6
0
0 160 320 480 640 800
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
4
www.fairchildsemi.com



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