FCPF220N80 Datasheet PDF - Fairchild Semiconductor

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FCPF220N80
Fairchild Semiconductor

Part Number FCPF220N80
Description MOSFET
Page 9 Pages


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FCPF220N80
N-Channel SuperFET® II MOSFET
800 V, 23 A, 220 m
May 2015
Features
• Typ. RDS(on) = 188 m
• Ultra Low Gate Charge (Typ. Qg = 78 nC)
• Low Eoss (Typ. 7.5 uJ @ 400 V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC-DC Power Supply
• LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
(f >1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2015 Fairchild Semiconductor Corporation
FCPF220N80 Rev. 1.1
1
FCPF220N80
800
±20
±30
23*
14.6*
57*
645
4.6
27.8
100
20
44
0.35
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF220N80
2.8
62.5
Unit
oC/W
www.fairchildsemi.com



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Package Marking and Ordering Information
Part Number
FCPF220N80
Top Mark
FCPF220N80
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
800
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 2.3 mA
VGS = 10 V, ID = 11.5 A
VDS = 20 V, ID = 11.5 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 23 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 23 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 23 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 23 A,
dIF/dt = 100 A/s
(Note 4)
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
0.8 - V/oC
-
-
25
250
A
- ±100 nA
- 4.5 V
188 220 m
25 - S
3430
100
0.3
49
304
78
16
28
0.78
4560
135
-
-
-
105
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
27 64 ns
19 48 ns
75 160 ns
2.6 15 ns
- 23 A
- 57 A
- 1.2 V
560 - ns
14 - C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 4.6 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 23 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
©2015 Fairchild Semiconductor Corporation
FCPF220N80 Rev. 1.1
2
www.fairchildsemi.com



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Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
10
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
0.3 1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4 *Note: TC = 25oC
0.3
VGS = 10V
0.2
VGS = 20V
0.1
0
12 24 36
ID, Drain Current [A]
48
60
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
Coss
100
*Note:
10 1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss
Crss = Cgd
0.1
0.1 1 10 100
VDS, Drain-Source Voltage [V]
800
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250s Pulse Test
150oC
10
25oC
-55oC
1
34567
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
150oC
25oC
1
0.10.3
0.6 0.9 1.2 1.3
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 23A
8
VDS = 160V
VDS = 400V
6
VDS = 640V
4
2
0
0 16 32 48 64 80
Qg, Total Gate Charge [nC]
©2015 Fairchild Semiconductor Corporation
FCPF220N80 Rev. 1.1
3
www.fairchildsemi.com



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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
100
10s
10 100s
1ms
1 10ms
Operation in This Area
is Limited by R DS(on)
0.1 *Notes:
1. TC = 25oC
DC
2. TJ = 150oC
3. Single Pulse
0.01
0.1 1 10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
20
Figure 8. On-Resistance Variation
vs. Temperature
2.8
*Notes:
2.4
1. VGS = 10V
2. ID = 11.5A
2.0
1.6
1.2
0.8
0.4
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature [oC]
15
10
5
0
0 160 320 480 640 800
VDS, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCPF220N80 Rev. 1.1
4
www.fairchildsemi.com



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Fairchild Semiconductor
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