FCPF150N65FL1 Datasheet PDF - Fairchild Semiconductor

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FCPF150N65FL1
Fairchild Semiconductor

Part Number FCPF150N65FL1
Description MOSFET
Page 8 Pages


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May 2015
FCPF150N65FL1
N-Channel SuperFET® II FRFET® MOSFET
650 V, 24 A, 150 mΩ
Features
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 133 mΩ
• Ultra Low Gate Charge (Typ. Qg = 72 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom/Server Power Supplies • Solar Inverters
• Computing Power Supplies
• FPD TV Power/Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. SuperFET II FRFET®
MOSFET combines a faster and more rugged intrinsic body
diode performance with fast switching, aimed at achieving bet-
ter reliability and efficiency especially in resonant switching
applications. SuperFET II FRFET is very suitable for the switch-
ing power applications such as server/telecom power, Solar
inverter, FPD TV power, computing power, lighting and indus-
trial power applications.
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF150N65FL1
650
±20
±30
24*
14.9*
72*
663
4.7
2.98
100
50
39
0.31
-55 to +150
300
FCPF150N65FL1
3.2
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
1
www.fairchildsemi.com



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Package Marking and Ordering Information
Part Number
FCPF150N65FL1
Top Mark
FCPF150N65F
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V,TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 2.4 mA
VGS = 10 V, ID = 12 A
VDS = 20 V, ID = 12 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss eff.
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 380 V, ID = 12 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
650
700
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.72
-
86
-
-
133
22
2810
91
0.77
54
361
72
15
31
0.69
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 12 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 12 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4.7 A, RG = 25 Ω, Starting TJ = 25°C.
3. ISD 12 A, di/dt 200 A/μs, VDD 380 V, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
(Note 4)
-
-
-
-
-
-
-
-
-
28
15
73
6
-
-
-
123
597
Quantity
50 units
Max. Unit
-
-
-
10
-
±100
V
V/oC
μA
nA
5V
150 mΩ
-S
3737
121
-
-
-
94
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
66 ns
40 ns
156 ns
22 ns
24 A
72 A
1.2 V
- ns
- nC
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
2
www.fairchildsemi.com



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Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1 1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.30
0.25
0.20
0.15
0.10
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
20 40 60
ID, Drain Current [A]
80
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
Coss
100
*Note:
10 1. VGS = 0V
2. f = 1MHz
Crss
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1 10 100
VDS, Drain-Source Voltage [V]
50
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
10 25oC
-55oC
1
345678
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10 150oC
1
25oC
0.1
0.01
0.001
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 130V
8 VDS = 325V
VDS = 520V
6
4
2
*Note: ID = 12A
0
0 16 32 48 64 80
Qg, Total Gate Charge [nC]
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 10mA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
100
10μs
100μs
10
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1 10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
15
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
-100
*Notes:
1. VGS = 10V
2. ID = 12A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature [oC]
12
9
6
3
0
0 100 200 300 400 500 600 700
VDS, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
4
www.fairchildsemi.com



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