F0240YH300 Datasheet PDF - IXYS

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F0240YH300
IXYS

Part Number F0240YH300
Description Extra Fast Recovery Diode
Page 11 Pages


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WESTCODE
An IXYS Company
Date:- 27 Aug, 2004
Data Sheet Issue:- 1
Extra Fast Recovery Diode
Types F0240Y#250 to F0240Y#300
Absolute Maximum Ratings
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IF(AV)M
IF(AV)M
IF(AV)M
IF(RMS)
IF(d.c.)
IFSM
IFSM2
I2t
I2t
Tj op
Tstg
OTHER RATINGS
Maximum average forward current, Tsink=55°C, (note 2)
Maximum average forward current. Tsink=100°C, (note 2)
Maximum average forward. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C Tj initial.
MAXIMUM
LIMITS
2500-3000
2600-3100
UNITS
V
V
MAXIMUM
LIMITS
240
150
87
455
374
3100
3410
48.1
58.1
-40 to +150
-40 to +150
UNITS
A
A
A
A
A
A
A
kA2s
kA2s
°C
°C
Data Sheet. Types F0240Y#250 to F0240Y#300 Issue 1
Page 1 of 11
August, 2004



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Characteristics
Extra Fast Recovery Diode Types F0240Y#250 to F0240Y#300
PARAMETER
VFM Maximum peak forward voltage
VT0 Threshold voltage
rT Slope resistance
VFRM Maximum forward recovery voltage
IRRM Peak reverse current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time, 50% Chord
R
thJK
Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
3.3
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 4.12 IFM=635A
- 3.70 IFM=480A
- 2.271
V
V
- 2.853
m
- 70 di/dt = 1000A/µs, 25°C
- 150 di/dt = 1000A/µs
V
- 50 Rated VRRM
mA
100 -
µC
40 55 IFM=550A, tp=500µs, di/dt=40A/µs, Vr=50V, µC
40 - 50% Chord.
A
2-
µs
- 0.1 Double side cooled
- 0.2 Single side cooled
K/W
- 5.5
kN
140 -
g
Notes:-
1) Unless otherwise indicated Tj=150°C.
Data Sheet. Types F0240Y#250 to F0240Y#300 Issue 1
Page 2 of 11
August, 2004



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Extra Fast Recovery Diode Types F0240Y#250 to F0240Y#300
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
25
26
28
30
VRRM
(V)
2500
2600
2800
3000
VRSM
(V)
2600
2700
2900
3100
VR dc
(V)
1500
1550
1650
1750
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the
coefficients of the expression for the forward characteristic given below:
VF = A + B ln(I F ) + C I F + D I F
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
150 µs
I.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
Data Sheet. Types F0240Y#250 to F0240Y#300 Issue 1
Page 3 of 11
August, 2004



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Extra Fast Recovery Diode Types F0240Y#250 to F0240Y#300
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery
loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then
be evaluated from:
[ ]TSINK = TJ (MAX ) E k + f RthJK
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
RthJK = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W(tot ) = W(original ) + E f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring
oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current
signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of
this snubber is shown below:
R2 = 4 Vr
CS
di
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of
snubber capacitor or excessively small values of snubber resistor. Such excessive component values
may lead to device damage due to the large resultant values of snubber discharge current. If required,
please consult the factory for assistance.
Data Sheet. Types F0240Y#250 to F0240Y#300 Issue 1
Page 4 of 11
August, 2004



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