ESDAVLC6-1BV2 Datasheet PDF - STMicroelectronics

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ESDAVLC6-1BV2
STMicroelectronics

Part Number ESDAVLC6-1BV2
Description Single line low capacitance Transi
Page 9 Pages


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ESDAVLC6-1BV2
Single line low capacitance Transil™ for ESD protection
Features
PCB area: 0.09 mm²
Bidirectional device
Low capacitance: 8 pF max.
Minimum breakdown voltage VBR = 6 V
Low leakage current: lower than 50 nA at 3 V
RoHS compliant
Applications
Where transient over voltage protection in ESD
sensitive equipment is required, such as:
Portable multimedia devices and accessories
MID, netbooks and notebooks
Digital cameras and camcorders
Communication systems
Smart phones and accessories
Description
The ESDAVLC6-1BV2 is a single line bidirectional
transil diode designed specially for the protection
of integrated circuits into portable equipment and
miniaturized electronics devices subject to ESD
transient overvoltage.
The device is ideal for applications where both
reduced printed circuit board space and high ESD
protection level are required.
Datasheet production data
ST01005
ESDAVLC6-1BV2
Figure 1. Functional diagram
Pin1
http://www.DataSheet4U.net/
TM: Transil is a trademark of STMicroelectronics
December 2012
This is information on a product in full production.
Doc ID 023822 Rev 1
1/9
www.st.com
9
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Characteristics
1 Characteristics
ESDAVLC6-1BV2
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
VPP Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
IPP Peak pulse current (8/20 µs)(1)
PPP Peak pulse power (8/20 µs)(1)
Tj Operating temperature range
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2. Electrical characteristics (definitions)
Symbol
VBR
VRM
VCL
IRM
IPP
=
=
=
=
=
RD =
CLINE =
Parameter
Breakdown voltage
Stand-off voltage
Clamping voltage
Leakage current @ VRM
Peak pulse current
Dynamic resistance
Line capacitance
VCL VBR VRM
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Slope: 1/Rd
Value
12
15
2.5
45
-55 to +150
- 65 to +150
260
Unit
kV
A
W
°C
°C
°C
I
IRM
V
VRM VBR VCL
IPP
Table 2. Electrical characteristics (values, Tamb = 25 °C)
Symbol
Parameter
Test conditions
VBR
IRM
VCL
Cline
Breakdown voltage
IR = 1 mA
Leakage current
VRM = 3 V
Clamping voltage
IPP = 1 A, 8/20 µs
IPP = 2.5 A maximum, 8/20 µs
Line capacitance, I/O to GND VR = 0 V, F = 1 MHz, Vosc = 30 mV
Value
Unit
Min.
6
Typ. Max.
50
12
18
7.5 8
V
nA
V
pF
2/9 Doc ID 023822 Rev 1
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ESDAVLC6-1BV2
Characteristics
Figure 3.
ESD response to IEC 61000-4-2
(typical values, +8 kV contact
discharge)
Figure 4.
ESD response to IEC 61000-4-2
(typical values, -8 kV contact
discharge)
10 V/div
1 49.7 V
22 29.3 V
3 20.3 V
10 V/div
1 VPP: ESD peak voltage
2 VCL :clamping voltage at 30 ns
3 VCL :clamping voltage at 60 ns
4 VCL :clamping voltage at 100 ns
4 13.8 V
20 ns/div
1 -50.8 V
2 -29.7 V
3 -19.4 V
4 -13.1 V
1 VPP: ESD peak voltage
2 VCL :clamping voltage at 30 ns
3 VCL :clamping voltage at 60 ns
4 VCL :clamping voltage at 100 ns
20 ns/div
Figure 5. S21 attenuation measurement
S21 (dB)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
100k
1M
S21
10M
F (Hz)
100M
1G
10G
Figure 6.
Junction capacitance versus
reverse applied voltage (typical
values)
C (pF)
10
9
8
7
F=1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
IO/GND
6
5
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4
3
2
1
VR(V)
0
0123456
Doc ID 023822 Rev 1
3/9
datasheet pdf - http://www.DataSheet4U.net/



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Ordering information scheme
2 Ordering information scheme
ESDAVLC6-1BV2
Figure 7. Ordering information scheme
ESD array
Very low capacitance
Breakdown voltage
6 = 6 V min.
Number of lines
Directional
B = bidirectional
Package
V = ST01005 package
2 = 2 pads
ESDA VLC 6 - 1 B V 2
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4/9 Doc ID 023822 Rev 1
datasheet pdf - http://www.DataSheet4U.net/



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