ESDALC6V1M3 Datasheet PDF - STMicroelectronics

www.Datasheet-PDF.com

ESDALC6V1M3
STMicroelectronics

Part Number ESDALC6V1M3
Description Dual low capacitance TRANSIL array
Page 8 Pages


ESDALC6V1M3 datasheet pdf
Download PDF
ESDALC6V1M3 pdf
View PDF for Mobile

No Preview Available !

ESDALC6V1M3
Dual low capacitance TRANSIL™ array for ESD protection
Main product applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Computers
Printers
Communication systems
Cellular phone handsets and accessories
Video equipment
Features
www.DataSheet4U.com
2 unidirectional low capacitance TRANSIL
diodes
Breakdown Voltage VBR = 6.1 V min
Low diode capacitance (11 pF typ at 0 V)
Low leakage current < 0.5 µA
Very small PCB area: 0.6 mm²
RoHS compliant
Description
The ESDALC6V1M3 is a monolithic array
designed to protect 1 line or 2 lines against ESD
transients.
The device is ideal for applications where both
reduced line capacitance and board space saving
are required.
Benefits
High ESD protection level
High integration
Suitable for high density boards
SOT 883
(JEDEC MO-236AA Compliant)
Configuration
I/O2 12
212 I/O1
G3ND
GND
Underside view
Order code
Part number
ESDALC6V1M3
Marking
K
Complies with the following standards
IEC61000-4-2 level 4:
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883E-Method 3015-7: class 3
HBM (Human Body Model)
TRANSIL is a trademark of STMicroelectronics
June 2006
Rev 3
www.st.com
1/8



No Preview Available !

Characteristics
1 Characteristics
ESDALC6V1M3
Table 1. Absolute ratings (TAMB = 25° C - limiting values)
Symbol
Parameter
Value Unit
IEC61000-4-2 air discharge
VPP
ESD discharge
IEC61000-4-2 contact discharge
PPP
Peak pulse power dissipation (8/20 µs)(1)
Tj initial = TAMB
Ipp Repetitive peak pulse current (8/20 µs)
Tj Junction temperature
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
TOP Operating temperature range
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
± 15
±8
30
3
125
-55 + 150
260
-40 + 125
kV
W
A
°C
°C
°C
°C
Table 2. Electrical characteristics (TAMB = 25° C)
Symbol
Parameter
I
VRM
Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current @ VRM
IPP Peak pulse current
αT Voltage temperature coefficient
VF Forward voltage drop
IF
VCL VBR VRM
VF
I RM
IR
Slope= 1/ Rd
I PP
V
Parameter
Test condition
Min Typ Max Unit
VBR
IR = 1 mA
6.1 7.2 V
IRM VRM = 5 V
0.5 µA
Rd
αT IR = 1 mA
1.1
4.2 10-4/°C
C VR = 0 V, F = 1 MHz, VOSC = 30 mV
11
pF
2/8



No Preview Available !

ESDALC6V1M3
Characteristics
Figure 1.
dB
0.00
- 3 dB
S21 attenuation measurement
results of each channel
- 10.00
540 MHz
- 20.00
- 30.00
- 40.00
100.0k
1.0M
Att 1
f (Hz)
1.8 GHz
10.0M
100.0M
1.0G
Figure 3.
ESD response to IEC61000-4-2
(+15 kV air discharge) on each
channel
Figure 2.
dB
0.00
Analog crosstalk measurements
between channels
-9.3 dB
- 30.00
-52 dB
- 60.00
- 90.00
- 120.00
100.0k
1.0M
Xtalk
f (Hz)
10.0M
100.0M
1.0G
Figure 4.
ESD response to IEC61000-4-2
(-15 kV air discharge) on each
channel.
Figure 5.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 6. Peak pulse power versus
exponential pulse duration
PPP[Tj initial] /PPP[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Tj(°C)
0.0
0
25 50 75 100 125 150
PPP(W)
1000
100
10
1
Tj initial = 25 °C
tP (µs)
10
100
3/8



No Preview Available !

Ordering information scheme
ESDALC6V1M3
Figure 7. Clamping voltage versus peak
pulse current (typical values)
100.0
IPP(A)
8/20 µs
Tjinitial =25 °C
10.0
1.0
Figure 8. Forward voltage drop versus peak
forward current (typical values)
IFM(A)
1.E+00
1.E-01
1.E-02
Tj =125°C
Tj=25°C
0.1
0
VCL(V)
10 20 30 40 50 60 70
1.E-03
V(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 9.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 10. Relative variation of leakage
current versus junction
temperature (typical values)
C(pF)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
F=1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
IR[Tj] / IR[Tj=25 °C]
100
VR = 3V
10
VLINE (V)
23456
1
25
50
Tj(°C)
75
100
125
2 Ordering information scheme
ESD Array
Low Capacitance
Breakdown Voltage
6V1 = 6.1 Volts min
Package
M3 = SOT883
ESDA LC 6V1 M3
4/8



ESDALC6V1M3 datasheet pdf
Download PDF
ESDALC6V1M3 pdf
View PDF for Mobile


Related : Start with ESDALC6V1M Part Numbers by
ESDALC6V1M3 Dual low capacitance TRANSIL array ESDALC6V1M3
STMicroelectronics
ESDALC6V1M3 pdf
ESDALC6V1M6 (ESDALC6V1xxM6) 4 and 5 line low capacitance TRANSIL array ESDALC6V1M6
STMicroelectronics
ESDALC6V1M6 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact