EGP20B Datasheet PDF - Taiwan Semiconductor

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EGP20B
Taiwan Semiconductor

Part Number EGP20B
Description Glass Passivated High Efficient Plastic Rectifiers
Page 2 Pages


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EGP20A THRU EGP20K
Features
2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 800 Volts
Current
2.0 Amperes
DO-15
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature metallurgically bonded construction
High temperature soldering guaranteed:
300/10 seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
Cases: JEDEC DO-15 molded plastic over glass body
Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.015 ounce, 0.4 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol EGP EGP EGP EGP EGP EGP EGP
20A 20B 20D 20F 20G 20J 20K
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 300 400 600 800
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length @ TA = 55
VDC 50 100 200 300 400 600 800
I(AV)
2.0
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
75.0
Maximum Instantaneous Forward Voltage @ 2.0A
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
VF
IR
0.95
1.25
5.0
100
1.7
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75
Typical Junction Capacitance ( Note 2 )
Cj 40
35
Typical Thermal Resistance (Note 3)
RθJA
RθJL
60
20
Operating and Storage Temperature Range
TJ ,TSTG
-65 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied VR=4.0 Volts
3. Mount on Cu-Pad Size 10mm x 10mm on P.C.B.
Units
V
V
V
A
A
V
uA
uA
nS
pF
/W
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RATINGS AND CHARACTERISTIC CURVES (EGP20A THRU EGP20K)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
3.0
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
2.0
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.5- TYPICAL REVERSE CHARACTERISTICS
100
Tj=1500C
10
1.0
0
0 25
50 75 100 125 150 175
AMBIENT TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
90
Tj=Tj max.
75 8.3ms Single Half Sine Wave
JEDEC Method
60
45
30
15
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
140
Tj=250C
120 f=1.0MHz
Vsig=50mVp-p
100
80
60
40
20
0
0.1
EGP20A-EGP20D
EGP20F-EGP20K
1 10
REVERSE VOLTAGE. (V)
100
1000
1 Tj=1250C
0.1 Tj=750C
0.01
Tj=250C
0.001
0
20
40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
PULSE WIDTH-300 S
1% DUTY CYCLE
10
Tj=1500C
1
Tj=250C
0.1
0.01
0.2 0.4
EGP20A-EGP20D
EGP20F EGP20K
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE. (V)
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