EGP10G Datasheet PDF - GALAXY ELECTRICAL

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EGP10G
GALAXY ELECTRICAL

Part Number EGP10G
Description HIGH EFFICIENCY RECTIFIER
Page 2 Pages


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BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
EGP10A(Z) --- EGP10G(Z)
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
DO - 41
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EGP
10A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length
@TA=75
Peak forw ard surge current
VRRM
VRMS
VDC
IF(AV)
50
35
50
8.3ms single half-sine-w ave
IFSM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.0 A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse uoltage of 4.0V DC.
3.Thermal resistance f rom junction to ambient.
EGP
10B
100
70
100
EGP
10C
150
105
150
EGP
10D
200
140
200
1.0
30.0
0.95
5.0
100.0
50
22
50
- 55 ---- + 150
- 55 ---- + 150
EGP
10F
300
210
300
EGP
10G
400
280
400
UNITS
V
V
V
A
A
1.25 V
A
ns
15 pF
www.galaxycn.com
Document Number 0262008
BLGALAXY ELECTRICAL
1.



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RATINGS AND CHARACTERISTIC CURVES
EGP10A (Z)---EGP10G(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 10
N 1. N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
(+)
PULSE
GENERATOR
(NOTE2)
(-)
NOTES:1.RISETIME=7ns MAX.INPUTIMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX.SOURCEIMPEDANCE=50Ω.
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25
Pulse Width=300µS
1.0
50\100 \150 \200V
0.1
0.04
300\400V
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5--TYPICAL JUNCTION CAPACITANCE
+0.5A
0
-0.25A
trr
-1.0A
1cm
SETTIMEBASEFOR20/30 ns/cm
FIG.4--TYPICAL REVERSE CHARACTERISTICS
1.0
0.5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375"(9.5mm)LEAD LENGTH
0
0 25 50 75
100 125 150 175
NUMBER OF CYCLES AT60Hz
FIG.6--FORWARD DERATING CURVE
35
30
25
20
15
10
5
0
0.1
EGP10A-EGP10D
EGP10F&EGP10G
14
TJ=25
10
100
30
25
20
15
10
5
0
1
TJ=125
8.3m s Single H alf
Sine-W ave
E G P 10A -E G P 10G
10 100
REVERSE VOLTAGE,VOLTS
Document Number 0262008
AMBIENT TEMPERATURE,
BLGALAXY ELECTRICAL
www.galaxycn.com
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