Specifications Table -- continued from previous page
Transistor on output stage
without detecting object
At 5 to 24 VDC: 80-mA load current (IC) with a residual voltage of 0.8 V max.
When driving TTL: 40-mA load current (IC) with a residual voltage of 0.4 V max.
Transistor on output stage ON
with detecting object
EE-1001/1006 Connectors; soldering terminals
GaAs infrared LED with a peak wavelength of 940 nm
Si photo-transistor with a sensing wavelength of 850 nm max.
*The response frequency was measured by detecting the following disks rotating.
Soldering heat resistance
-25°C to 55°C (-13°F to 131°F)
-30°C to 80°C (-22°F to 176°F)
45% to 85%
35% to 95%
Destruction: 20 to 2,000 Hz (with a peak acceleration of 20G’s), 1.5-mm double amplitude for
4 min each in X, Y, and Z directions
Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions
260°±5°C (See Note.) when the portion between the tip of the terminals and the position
1.5 mm from the terminal base is dipped into the solder for 10±1 seconds
Note: This conforms to MIL-STD-750-2031-1.