EE-SB5 Datasheet PDF - OMRON

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EE-SB5
OMRON

Part Number EE-SB5
Description Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment
Page 6 Pages


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EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
Photomicrosensor with 80-mA
Switching Capacity that can be Built
into Equipment
 Built-in amplifier
 Models available with 5- to 12-VDC and
5- to 15-VDC input
 CMOS- and TTL-compatible
 Model with easy adjustment with an
external sensitivity adjuster (EE-SB5V)
 Special connectors (EE-1001/1006) are
available
 19-mm sensing distance (EE-SB5V-E)
 Convert to PNP output with EE-2002
conversion connector
Ordering Information
Appearance
Sensing method
Reflective
Sensing distance
5 mm
19 mm
Output configuration
Light-ON
Dark-ON
Light-ON
Dark-ON
Light-ON
Weight
Approx. 3.0 g
Approx. 2.8 g
Part number
EE-SB5M
EE-SB5MC
EE-SB5V
EE-SB5VC
EE-SB5V-E
Specifications
 RATINGS
Item
Supply voltage
Current consumption
Maximum forward direct current (IF)
Forward voltage (VF)
Reverse voltage (VR)
Standard reference object
Differential distance
Reflective
EE-SB5M
EE-SB5MC
EE-SB5V(-E)
EE-SB5VC
5 to 12 VDC ±10%, ripple (p-p): 10% max. 5 to 15 VDC ±10%, ripple (p-p): 10% max.
36 mA max.
48 mA max. (DC current: IF = 25 mA)
30 mA max.
— 1.5 V max. (IF = 30 mA)
— 4 V max.
White paper with reflection factor of 90% (standard sensing object: 15 x 15 mm)
0.1 mm
(This table continues on the next page.)



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EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
Specifications Table -- continued from previous page
Item
Reflective
EE-SB5M
EE-SB5MC
EE-SB5V(-E)
EE-SB5VC
Control output
Output
configuration
Transistor on output stage
without detecting object
At 5 to 24 VDC: 80-mA load current (IC) with a residual voltage of 0.8 V max.
When driving TTL: 40-mA load current (IC) with a residual voltage of 0.4 V max.
OFF
ON
OFF
ON
Transistor on output stage ON
with detecting object
OFF
ON
OFF
Response frequency*
50 Hz
Connecting method
EE-1001/1006 Connectors; soldering terminals
Light source
GaAs infrared LED with a peak wavelength of 940 nm
Receiver
Si photo-transistor with a sensing wavelength of 850 nm max.
*The response frequency was measured by detecting the following disks rotating.
200 mm
dia.
Disk
15 mm
15 mm
15 mm
 CHARACTERISTICS
5 mm
Ambient temperature
Ambient humidity
Vibration resistance
Operating
Storage
Operating
Storage
Shock resistance
Soldering heat resistance
-25°C to 55°C (-13°F to 131°F)
-30°C to 80°C (-22°F to 176°F)
45% to 85%
35% to 95%
Destruction: 20 to 2,000 Hz (with a peak acceleration of 20G’s), 1.5-mm double amplitude for
4 min each in X, Y, and Z directions
Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions
260°±5°C (See Note.) when the portion between the tip of the terminals and the position
1.5 mm from the terminal base is dipped into the solder for 10±1 seconds
Note: This conforms to MIL-STD-750-2031-1.



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EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
Engineering Data
 OPERATING RANGE (TYPICAL 1)
EE-SB5M(C) Reference object:
White paper ( 15 x 15 mm)
(reflection factor: 90%)
Releases
Operates
Optical
axis
X
Y
X (mm)
 SENSING DISTANCE VS. OBJECT
AREA (TYPICAL)
EE-SB5M(C)
Reference object:
White paper ( 15 x 15 mm)
(reflection factor: 90%)
Area (mm2)
EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
 OPERATING RANGE (TYPICAL 2)
EE-SB5M(C)
Reference ob-
ject: White paper
(15 x 15 mm)
(reflection factor:
90%)
Releases
Operates
Optical
axis
X’
Y
X’ (mm)
 SENSING DISTANCE VS. IF EE-SB5V-E
(TYPICAL)
20
TA = 25°C
Reference object
16 White paper:
(reflection factor 90%)
12
8
4
0 5 10 15 20 25 30
Forward Current IF (mA)



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EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
Operation
 INTERNAL/EXTERNAL CIRCUIT DIAGRAMS
EE-SB5M(C) Light-ON/Dark-ON
EE-SB5V(C), EE-SB5V-E Light-ON/Dark-ON
Main
circuit
5 to 12 VDC
L
Load
(relay)
OUT
IC
Logic
circuit
RL
Connect RL as
shown only
when logic cir-
cuit is driven.
0V
Main
circuit
LED
display
5 to 15 VDC
Load (relay)
OUT
IC
Logic circuit
RL
0V
RF
L
Current-limiting
resistor
 TIMING CHART
Light-ON
Output
transistor
Load (relay)
Output voltage
(logic)
Incident
Interrupted
ON
OFF
Operates
Releases
H
L
Dark-ON
Output
transistor
Load (relay)
Output voltage
(logic)
Incident
Interrupted
ON
OFF
Operates
Releases
H
L
Dimensions
Unit: mm (inch)
 EE-SB5M(C), EE-SB5V(C), EE-SB5V-E
6.35
6.95 (0.25) 4.55
(0.27)
(0.18)
25.4 (1.00)
19.0 (0.75)
9.8
(0.39)
13.0 (0.51)
Optical axis
Two, 3.2 dia.
holes
Optical
axis
Terminal Arrangement
(1) VCC
(2) L L
(3) OUT OUTPUT
(4) GND (0 V)
9.0
(0.35)
16.7
(0.66)
13.2
(0.52)
5.5
(0.22)
8.0
(0.31)
6.2
(0.24)
1.2 (0.05)
1.5
Two, 3.8 dia.
holes
2.55
(0.10)
0.6
(0.02)
(1)(2)(3)(4)
0.8
(0.03) 2.54 (0.10)
1.45 (0.06)
0.3
(0.01)



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EE-SB5 Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment EE-SB5
OMRON
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