EB13001 Datasheet PDF - SY

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EB13001
SY

Part Number EB13001
Description Transistors
Page 3 Pages


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SY semiconductors
Shenzhen SY Semiconductors Co.LTD.
EB SERIES TRANSISTORS
EB13001
FEATURES:①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION:①FLUORESCENT LAMP ②ELECTRONIC BALLAST
Absolute Maximum Ratings (Tc=25℃)
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PARAMETER
Collector–Base Voltage
Collector–Emitter Voltage
Emitter –Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
VALUE
500
400
9
0.3
7
150
-65-150
UNIT
V
V
V
A
W
TO-92 NPN
Electronic Characteristics (Tc=25℃)
CHARACTERISTICS
SYMBOL
Collector–Base Cutoff Current
ICBO
Collector–Emitter Cutoff Current
ICEO
Collector–Emitter Voltage
VCEO
Emitter –Base Voltage
VEBO
Collector–Emitter Saturation
Vcesat
Voltage
Base–Emitter Saturation Voltage
Vbesat
DC Current Gain
HFE
Storage Time
Falling Time
Ts
Tf
TEST CONDITION
VCB=500v
VCE=400v
IC=10mA IB=0
IE=1mA IC=0
IC=0.05A IB=0.01A
IC=200mA IB=50mA
IC=50mA IB=10mA
VCE=5v IC=1mA
VCE=20v IC=20mA
VCE=5v IC=250mA
VCC=5V
IC=0.1A
MIN
400
9
7
10
5
0.5
MAX
100
250
0.4
0.8
1.1
UNIT
µA
µA
V
V
V
V
V
40
2.5 µS
0.8 µS
CLASSIFICATION OF HFE AND TS
HFE
10-15
15-20
TS
0.5-1.0
1.0-1.5
20-25
1.5-2.0
25-30
2.0-2.5
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SY semiconductors
Shenzhen SY Semiconductors Co.LTD.
EB SERIES TRANSISTORS
EB13001
www.DataSheet4U.com
SY semiconductors
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SY semiconductors
Shenzhen SY Semiconductors Co.LTD.
EB SERIES TRANSISTORS
EB13001
www.DataSheet4U.com
SYMBOL
A
b
c
D
d
E
e
e1
L
L1
Min
4.3
0.3
0.3
4.3
1.0
3.2
12.7
Nom
2.54
1.27
Max
5.3
5.2
1.7
4.2
2.0
SY semiconductors
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