E180NE10 Datasheet PDF - STMicroelectronics

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E180NE10
STMicroelectronics

Part Number E180NE10
Description STE180NE10
Page 8 Pages


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® STE180NE10
N-CHANNEL 100V - 4.5 m- 180A ISOTOP
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
STE180NE10
100 V < 6 m
s TYPICAL RDS(on) = 4.5 m
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
ID
180 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulation Withstand Voltage (AC-RMS)
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1999
Value
Un it
100 V
100 V
± 20
V
180 A
119 A
540 A
360
2. 88
W
W /o C
2500
-55 to 150
150
( 1) ISD 180 Α, di/dτ 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
1/8



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STE180NE10
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With conductive
Grease Applied
Max
Max
0.347
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
60
720
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 1 mA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ.
Max.
Unit
V
4
40
± 400
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10 V ID = 90 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2
Typ.
3
4.5
Max.
4
6
Unit
V
m
180 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 80 A
Min.
30
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
21 nF
2.5 nF
0.9 nF
2/8



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STE180NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 90 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V ID = 180 A VGS = 10 V
Min.
Typ.
35
100
142
37
60
Max.
185
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(on)
tr
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V
ID = 90 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V
ID = 180 A
RG = 4.7
VGS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
110
100
100
50
92
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM ()
VSD ()
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 180 A VGS = 0
ISD = 180 A
VDD = 50 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
180
540
1.5
170
850
10
Unit
A
A
V
ns
µC
A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8



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STE180NE10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8



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