DSEI30-12A Datasheet PDF - IXYS

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DSEI30-12A
IXYS

Part Number DSEI30-12A
Description Fast Recovery Epitaxial Diode
Page 2 Pages


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Fast Recovery
Epitaxial Diode (FRED)
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DSEI 30
IFAVM = 26 A
VRRM = 1200 V
trr = 40 ns
VRSM
V
1200
VRRM
V
1200
Type
DSEI 30-12A
TO-247 AD
AC
C
A
A = Anode, C = Cathode
C
Symbol
IFRMS
IFAVM ÿÿx
IFRM
IFSM
I2t
TVJ
TVJM
Tstg
Ptot
Md
Weight
Symbol
IR
VF
VT0
rT
RthJC
RthCK
RthJA
trr
IRM
Test Conditions
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
Mounting torque
Maximum Ratings
70
26
375
200
210
185
195
200
180
170
160
-40...+150
150
-40...+150
138
0.8...1.2
6
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
°C
°C
°C
W
Nm
g
Test Conditions
Characteristic Values
typ. max.
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
0.25
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms
L £ 0.05 mH; TVJ = 100°C
40
16
750
250
7
2.2
2.55
1.65
18.2
0.9
35
60
18
mA
mA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
Features
q International standard package
JEDEC TO-247 AD
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low I -values
RM
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Anti saturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
q Operating at lower temperature or
space saving by reduced cooling
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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DSEI 30, 1200 V
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70
A
60
50
IF
40
30
TVJ=25°C
TVJ=100°C
TVJ=150°C
20
10
0
0123
VF
Fig. 1 Forward current
versus voltage drop.
V
4
6
µC
TVJ=100°C
VR= 540V
5
4
Qr
3
IF=30A
IF=60A
IF=30A
IF=15A
2
max.
1
typ.
50
A
TVJ=100°C
VR= 540V
40
IRM
30
IF=30A
IF=60A
IF=30A
IF=15A
20
10
max.
typ.
0
1 10 100 A/µs 1000
-diF/dt
Fig. 2 Recovery charge versus -di /dt.
F
0
0 200 400 A/µs 600
-diF/dt
Fig. 3 Peak reverse current versus
-diF/dt.
1.4
1.2
1.0
Kf
0.8
IRM
0.6
QR
0.4
0.2
0.0
0
40 80
TJ
120 °C 160
Fig. 4 Dynamic parameters versus
junction temperature.
1.0
µs
0.8
trr 0.6
0.4
max.
TVJ=100°C
VR=540V
IF=30A
IF=60A
IF=30A
IF=15A
0.2
typ.
0.0
0
200 400 A/µs 600
-diF/dt
Fig. 5 Recovery time versus -diF/dt.
60
V
50
40
VFR
30
VFR
1200
ns
1000
800
tfr
600
20 400
10
0
0
tfr
200
diF/dt
TVJ=125°C
IF=30A
200
0
400 A/µs 600
Fig. 6 Peak forward voltage
versus di /dt.
F
1.0
K/W
0.8
ZthJC
0.6
0.4
0.2
0.0
0.001
0.01
0.1 1 s
t
Fig. 7 Transient thermal impedance junction to case.
10
Dimensions
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F 5.4 6.2
G 1.65 2.13
H - 4.5
J 1.0 1.4
K 10.8 11.0
L 4.7 5.3
M 0.4 0.8
N 2.2 2.54
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
© 2000 IXYS All rights reserved
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IXYS
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