DMP3035LSS Datasheet PDF - Diodes Incorporated

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DMP3035LSS
Diodes Incorporated

Part Number DMP3035LSS
Description ENHANCEMENT MODE MOSFET
Page 5 Pages


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Features
Low On-Resistance
14m@ VGS = -20V
18m@ VGS = -10V
36m@ VGS = -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
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DMP3035LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
SO-8
SD
SD
SD
GD
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-30
±25
-11
-8
-80
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2.0
60
-55 to +150
Notes:
1. Device mounted on 1 in.2 FR-4 board with 2 oz. Copper, in a still-air environment with TA = 25°C.
2. No purposefully added lead.
3. Repetitive rating, pulse width limited by junction temperature.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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Unit
W
°C/W
°C
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
1 of 5
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August 2009
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DMP3035LSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
gfs
VSD
Ciss
Coss
Crss
RG
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
td(on)
tr
td(off)
tf
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Min
-30
-1
-0.5
Typ
11
15
27
12
1655
286
240
2.3
15.3
30.7
3.5
7.9
5.1
8
46
30
Max
-1
±100
±800
-2
14
18
36
-1.1
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -20V, ID = -11A
mΩ VGS = -10V, ID = -8A
VGS = -4.5V, ID = -5A
S VDS = -10V, ID = -12A
V VGS = 0V, IS = -2A
pF
pF VDS = -20V, VGS = 0V
f = 1.0MHz
pF
Ω VGS = 0V, VDS = 0V, f = MHz
VDS = -15V, VGS = -4.5V, ID = -8A
nC VDS = -15V, VGS = -10V, ID = -8A
VDS = -15V, VGS = -10V, ID = -8A
VDS = -15V, VGS = -10V, ID = -8A
ns VGS = -10V, VDS = -15V,
RD = 15Ω, RG = 6Ω
20
VGS = -10V
16 VGS = -4.0V
VGS = -3.0V
12
VGS = -2.5V
8
4
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01
VGS = -1.5V
23
VGS = -2.0V
45
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
20
16
12
8 TA = 150°C
TA = 125°C
TA = 85°C
4 TA = 25°C
TA = -55°C
0
1 1.5
2 2.5
3 3.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
2 of 5
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August 2009
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DMP3035LSS
0.03
0.025
0.02
0.015
0.01
VGS = -4.5V
VGS = -10V
0.005
0
0
1.6
6 12 18 24
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0.03
0.025
0.02
0.015
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.005
0
0
10,000
6 12 18 24
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
1.4
VGS = -10V
ID = -10A
1.2
VGS = -4.5V
ID = -5A
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
2.4
2.0
1.6
1.2
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ID = -250µA
0.4
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
f = 1MHz
1,000
Ciss
Coss
Crss
100
0
20
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
30
16
12 TA = 25°C
8
4
0
0 0.2 0.4 0.6 0.8
1 1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
3 of 5
www.diodes.com
August 2009
© Diodes Incorporated



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DMP3035LSS
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1 1 10
t1, PULSE DURATION TIME (s)
Fig. 9 Transient Thermal Response
RθJA(t) = r(t) * RθJA
RθJA = 87°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
100 1,000
10,000
Ordering Information (Note 6)
Notes:
Part Number
DMP3035LSS-13
Case
SO-8
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
P3035LS
YY WW
14
Logo
Part no.
Xth week: 01~52
Year : "07" =2007
"08" =2008
Packaging
2500/Tape & Reel
Package Outline Dimensions
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e
D
b
E1 E
A1
L
Detail ‘A’
Gauge Plane
Seating Plane
A2 A A3
h
45°
7°~9°
Detail ‘A’
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
4 of 5
www.diodes.com
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
August 2009
© Diodes Incorporated



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Diodes Incorporated
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