DMN4800LSSL Datasheet PDF - Diodes

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DMN4800LSSL
Diodes

Part Number DMN4800LSSL
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 6 Pages


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Product Summary
V(BR)DSS
30V
RDS(on)
14m@ VGS = 10V
20m@ VGS = 4.5V
ID max
TA = +25°C
8.0A
6.7A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
DMN4800LSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefitss
14m@ VGS = 10V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
SO-8
Top View
SD
SD
SD
GD
Top View
Internal Schematic
D
G
S
Equivalent circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN4800LSSL-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
85
N4800LS
YY WW
14
Chengdu A/T Site
85
N4800LS
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
N4800LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) VGS = 10V
Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
DMN4800LSSL
Value
30
±20
8.0
6.4
6.7
5.3
50
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.46
86
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
gfs
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min
30
0.8
Typ
1.2
11
14
8
0.72
798
128
122
1.37
8.7
1.7
2.4
5.03
4.50
26.33
8.55
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
Max
1
±100
1.6
14
20
0.94
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
m
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 7A
S VDS = 10V, ID = 8A
V VGS = 0V, IS = 1A
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VGS = 5V, VDS = 15V, ID = 9A
ns
VDD = 15V, VGEN = 10V,
RL = 15, RG = 6.0, ID = 1A
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated



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DMN4800LSSL
30
VGS = 10V
25
VGS = 4.5V
20
VGS = 3.0V
15
30
25 VDS = 5V
20
15
10
VGS = 2.5V
5
0
0
0.0 8
0.0 7
0.0 6
0.0 5
0.0 4
0.0 3
0.0 2
0.0 1
0
0
1.8
VGS = 2.0V
0.5 1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
VGS = 4.5V
5 10 15 20 25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
30
1.6
10
5
0
1
0.03
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VGS = 4.5V
3
0.02
TA = 150°C
TA = 125°C
TA = 85°C
0.01
TA = 25°C
TA = -55°C
0
0
0.03
0.025
5 10 15 20 25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
1.4 0.02
VGS = 4.5V
1.2
0.015
ID = 10A
1.0
VGS = 4.5V
ID = 10A
0.8
VGS = 10V
0.6 ID = 11.6A
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0.01
0.005
VGS = 10V
ID = 11.6A
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
3 of 6
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November 2013
© Diodes Incorporated



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DMN4800LSSL
1.6
1.2 ID = 1mA
ID = 250µA
0.8
0.4
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
1,000
100
Ciss
Coss
Crss
10
0
10,000
1,000
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
TA = 150°C
TA = 125°C
20
TA = 25°C
16
12
8
4
0
0.4
0.5 0.6
0.7 0.8
0.9 1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10
8
6 ID = 11.6A
ID = 9A
4
2
0
0 2 4 6 8 10 12 14 16
QG, TOTAL GATE CHARGE (nC)
Fig. 10 Total Gate Charge
100
TA = 85°C
10
TA = 25°C
1 TA = -55°C
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated



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