DMN4008LFG Datasheet PDF - Diodes

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DMN4008LFG
Diodes

Part Number DMN4008LFG
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 6 Pages


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DMN4008LFG
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
40V
RDS(ON) max
7.5m@ VGS = 10V
10m@ VGS = 4.5V
ID max
TA = +25°C
14.4A
12.5A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low RDS(ON) – ensures on state losses are minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
POWERDI®3333-8
S Pin 1
S
S
G
D
D
D
D
D
Bottom View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN4008LFG-7
DMN4008LFG-13
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N47
N47= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMN4008LFG
Value
40
±20
14.4
11.6
19.2
15.4
90
3
38
75
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.0
119
66
2.3
53
30
6.1
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
40
1
5.5
7
0.7
3537
257
215
0.9
34
74
10.2
12.5
8.2
14.1
69.7
24.4
18.5
12.0
1
±100
3
7.5
10
20
1.1
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
mVGS = 4.5V, ID = 8A
VGS = 3.3V, ID = 6A
V VGS = 0V, IS = 1A
pF
pF
pF
VDS = 20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VDS = 20V, ID = 10A
nC
ns
ns VGS = 10V, VDS = 20V,
ns RG = 6, ID = 10A
ns
nS
nC
IF = 10A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated



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DMN4008LFG
30.0
27.0
24.0
21.0
18.0
VGS = 10V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
15.0
12.0
9.0
6.0
3.0
0.0 0
VGS = 2.5V
1 23 4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0.014
5
0.012
0.01
VGS = 3.3V
30 VDS = 5.0V
27
24
21
18
TA = 150°C
15
TA = 125°C
12
9 TA = 85°C
6 TA = 25°C
TA = -55°C
3
0
1
0.04
0.035
0.03
1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
ID = 10.0A
ID = 8.0A
4
0.025
0.008
0.006
0.004
VGS = 4.5V
VGS = 10V
0.02
0.015
0.01
0.005
0.002
0
2 4 6 8 10 12 14 16 18
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0.011
VGS = 10V
0.01
0.009
TA = 150°C
TA = 125°C
0.008
0.007
TA = 85°C
0.006
0.005
TA = 25°C
0.004
0.003
TA = -55°C
0.002
0
2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0
0 2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
1.8
VGS = 10V
1.6 ID = 10A
VGS = 4.5V
1.4 ID = 8.0A
1.2
VGS = 3.3V
ID = 6.0A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated



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0.018
0.016
0.014
0.012
0.01
0.008
VGS = 3.3V
ID = 6.0A
VGS = 4.5V
ID = 8.0A
0.006
0.004
VGS = 10V
ID = 10A
0.002
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
30
27
24
21
18 TA = 150°C
15 TA = 125°C
TA = 85°C
12
TA = 25°C
9
TA = -55°C
6
3
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
VDS = 20V
ID = 10A
8
DMN4008LFG
2.2
2
1.8 ID = 1mA
1.6 ID = 250µA
1.4
1.2
1
0.8
-50
10000
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation
vs. Ambient Temperature
150
Ciss
1000
Coss
100
0
f = 1MHz
Crss
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
1000
RDS(ON)
Limited
100
6
4
2
0
0 10 20 30 40 50 60 70
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
10
DC
PW = 10s
1 PW = 1s
PW = 100ms
0.1
TJ(max) = 150°C
TA = 25°C
VGS = 10V
PW = 10ms
PW = 1ms
80
Single Pulse
0.01 DUT on 1 * MRP Board
0.01
0.1
1
PW = 100µs
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
4 of 6
www.diodes.com
July 2014
© Diodes Incorporated



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