DMN3016LK3 Datasheet PDF - Diodes

www.Datasheet-PDF.com

DMN3016LK3
Diodes

Part Number DMN3016LK3
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


DMN3016LK3 datasheet pdf
View PDF for PC
DMN3016LK3 pdf
View PDF for Mobile


No Preview Available !

DMN3016LK3
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(on)
12mΩ @ VGS = 10V
16mΩ @ VGS = 4.5V
ID
TC = +25°C
37.8A
32.8A
Features
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO252
D
D
Top View
D
GS
Top View
Pin-Out
G
S
Equivalent Circuit
Ordering Information (Notes 4)
Notes:
Product
DMN3016LK3-13
Case
TO252
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N3016L
YYWW
= Manufacturer’s Marking
NYY30W.1W6L==
Product Type Marking
Date Code Marking
Code
YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
DMN3016LK3
Document Number DS37206 Rev. 4 - 2
1 of 7
www.diodes.com
November 2014
© Diodes Incorporated



No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
Steady
State
t<10s
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
IS
IDM
IAS
EAS
DMN3016LK3
Value
30
±20
12.4
10
37.8
30.3
17
13.6
2
90
22
24
Units
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.6
1.0
75
34
2.8
1.8
46
24
3.1
-55 to +150
Units
W
°C/W
W
°C/W
°C
DMN3016LK3
Document Number DS37206 Rev. 4 - 2
2 of 7
www.diodes.com
November 2014
© Diodes Incorporated



No Preview Available !

DMN3016LK3
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
30
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
1.3
Typ Max
——
1
±100
8
12
0.70
2.3
12
16
1.0
1415
119
82
2.2
25.1
11.3
3.5
3.6
4.8
16.5
26.1
5.6
12.3
10.4
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 11A
VGS = 4.5V, ID = 9A
V VGS = 0V, IS = 1A
pF
pF VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = 15V, ID = 12A
nC
ns
ns VDD = 15V, VGS = 10V,
ns RL = 1.25Ω, RG = 3Ω,
ns
ns
nC IF = 12A, di/dt = 500A/μs
30.0
25.0
20.0
VGS = 10V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
15.0
10.0
5.0
0.0
0
VGS = 2.5V
VGS = 2.2V
0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
30
VDS = 5.0V
25
20
15
10
5
00
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1 1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
DMN3016LK3
Document Number DS37206 Rev. 4 - 2
3 of 7
www.diodes.com
November 2014
© Diodes Incorporated



No Preview Available !

0.03
0.02
0.01
VGS = 4.5V
VGS = 10V
0.03
VGS = 4.5V
0.025
0.02
0.015
0.01
0.005
DMN3016LK3
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0 0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
VGS = 10V
ID = 10A
1.6
1.4 VGS = 4.5V
ID = 5A
1.2
1
0
0
0.024
0.02
0.016
0.012
0.008
5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
30
VGS = 4.5V
ID = 5A
VGS = 10V
ID = 10A
0.8 0.004
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
3
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
30
2.5 25
2
ID = 1mA
1.5 ID = 250µA
20
15 TA = 25°C
1 10
0.5 5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
DMN3016LK3
Document Number DS37206 Rev. 4 - 2
4 of 7
www.diodes.com
November 2014
© Diodes Incorporated



DMN3016LK3 datasheet pdf
Download PDF
DMN3016LK3 pdf
View PDF for Mobile


Related : Start with DMN3016LK Part Numbers by
DMN3016LK3 N-CHANNEL ENHANCEMENT MODE MOSFET DMN3016LK3
Diodes
DMN3016LK3 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact