DMG2301L Datasheet PDF - Diodes

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DMG2301L
Diodes

Part Number DMG2301L
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Page 6 Pages


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Product Summary
V(BR)DSS
-20V
RDS(ON) max
120mΩ @ VGS = -4.5V
150mΩ @ VGS = -2.5V
ID max
TA = +25°C
-3A
DMG2301L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
SOT23
G
D
Top View
S
Internal Schematic
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMG2301L-7
DMG2301L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
21M = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
DMG2301L
Document number: DS37540 Rev. 3 - 2
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
1 of 6
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2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
September 2015
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)
Drain-Source Diode Forward Current ( t < 5 sec)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
-20
±8
-3
-1
-10
-0.75
DMG2301L
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.5
83
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
TJ = +25°C
BVDSS
IDSS
IGSS
VGS(TH)
Min
-20
-0.4
Typ
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
VSD  
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
476
53
45
5.5
0.9
1.8
5
10
30
20
Notes:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-1.0
±100
-1.2
120
150
-1.2
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
nA VGS = 6V, VDS = 0V
V VDS = VGS, ID = -250µA
mVGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
V VGS = 0V, IS = -0.75A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
nC
nC VGS = -4.5V, VDS = -6V, ID = -2.8A
nC
ns
ns VDS = -6V, VGS = -4.5V,
ns RGEN = 6, ID = -1A
ns
DMG2301L
Document number: DS37540 Rev. 3 - 2
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September 2015
© Diodes Incorporated



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10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
VGS = -3.0V
VGS = -4.0V
VGS = -4.5V
VGS = -2.5V
VGS = -8.0V
VGS = -2.0V
VGS = -1.2V
VGS = -1.5V
VGS = -1.0V
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
0.2
0.18
0.16
0.14
0.12
VGS= -2.5V
0.1
0.08
0.06
VGS= -4.5V
0.04
0.02
0
1 2 3 4 5 6 7 8 9 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs Drain Current
and Gate Voltage
0.15
VGS= -4.5V
0.12
TA = 125oC
TA = 150oC
0.09
0.06
0.03
TA = 85oC
TA = 25oC
TA = -55oC
10
VDS= -5V
8
6
4
TA = -55oC
TA = 25oC
DMG2301L
TA = 150oC
TA = 125oC
TA = 85oC
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
0.5
0.45
0.4
ID = -2.8A
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
ID = -2.0A
246
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
8
1.8
1.6
VGS = -2.5V, ID = -2.0A
1.4
1.2
VGS = -4.5V, ID = -3.0A
1
0.8
0 0.6
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6 On-Resistance Variation with Temperature
DMG2301L
Document number: DS37540 Rev. 3 - 2
3 of 6
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September 2015
© Diodes Incorporated



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0.2
0.18
0.16
0.14
VGS = -2.5V, ID = -2.0A
0.12
0.1
0.08
0.06
VGS = -4.5V, ID = -3.0A
0.04
0.02
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7 On-Resistance Variation with Temperature
10
VGS = 0V, TA = -55oC
8
VGS = 0V, TA = 25oC
6
VGS = 0V, TA = 85oC
4
VGS = 0V, TA = 125oC
VGS = 0V, TA = 150oC
2
DMG2301L
1.5
1.2
0.9 ID = -1mA
0.6
ID = -250µA
0.3
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE ()
Figure 8 Gate Threshold Variation vs Ambient
Temperature
1000
Ciss
f = 1MHz
100
Coss
Crss
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
6
VDS = -6V, ID = -2.8A
10
0
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 10 Typical Junction Capacitance
100
RDS(ON)
Limited
10
4
2
0
012345678
Qg (nC)
Figure 11 Gate Charge
DMG2301L
Document number: DS37540 Rev. 3 - 2
1 DC
9 10
PW=10s
0.1
0.01
TJ(Max)=150
TA=25
VGS=4.5V
Single Pulse
DUT on
1*MRP Board
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100µs
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
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September 2015
© Diodes Incorporated



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