D7NB20 Datasheet PDF - STMicroelectronics

www.Datasheet-PDF.com

D7NB20
STMicroelectronics

Part Number D7NB20
Description STD7NB20
Page 10 Pages


D7NB20 datasheet pdf
Download PDF
D7NB20 pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
STD7NB20
STD7NB20-1
N-CHANNEL 200V - 0.3- 7A DPAK/IPAK
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STD7NB20
STD7NB20-1
200 V
200 V
< 0.40
< 0.40
7A
7A
s TYPICAL RDS(on) = 0.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2002
Value
200
200
± 30
7
5
28
55
0.44
5.5
– 65 to 150
150
(1) ISD7A, di/dt200 A/µs, VDDV(BR)DSS, TjTjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/10
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
STD7NB20 / STD7NB20-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
2.27
100
275
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7
100
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
200
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5 A
Min.
3
Typ.
4
0.30
Max.
5
0.40
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
2
Typ.
3
470
135
22
Max.
650
190
30
Unit
S
pF
pF
pF
2/10
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 100 V, ID = 5 A
RG = 4.7VGS = 10 V
(see test circuit, Figure 3)
VDD = 160V, ID = 10 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 160V, ID = 10 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 7 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD7NB20 / STD7NB20-1
Min.
Typ.
10
15
17
7.5
5.5
Max.
14
20
24
Unit
ns
ns
nC
nC
nC
Min.
Typ.
8
10
20
Max.
11
14
28
Unit
ns
ns
ns
Min.
Typ.
170
980
11.5
Max.
7
28
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
STD7NB20 / STD7NB20-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
Datasheet pdf - http://www.DataSheet4U.net/



D7NB20 datasheet pdf
Download PDF
D7NB20 pdf
View PDF for Mobile


Related : Start with D7NB2 Part Numbers by
D7NB20 STD7NB20 D7NB20
STMicroelectronics
D7NB20 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact