D655 Datasheet PDF - Hitachi Semiconductor

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D655
Hitachi Semiconductor

Part Number D655
Description 2SD655
Page 6 Pages


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2SD655
Silicon NPN Epitaxial
Application
Low frequency power amplifier, Muting
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base
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2SD655
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
30
15
5
0.7
1.0
500
150
–55 to +150
Unit
V
V
V
A
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
30
Collector to emitter breakdown V(BR)CEO
voltage
15
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
Base to emitter voltage
Collector to emitter saturation
voltage
I CBO
VBE
VCE(sat)
0.15
DC current transfer ratio
hFE*1
250 —
Gain bandwidth product
fT
— 250
Notes: 1. The 2SD655 is grouped by hFE as follows.
2. Pulse test
D EF
250 to 500 400 to 800 600 to 1200
Max Unit
—V
—V
—V
1.0 µA
1.0 V
0.5 V
1200
MHz
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 1 V, IC = 150 mA
IC = 500 mA, IB = 50 mA*2
VCE = 1 V, IC = 150 mA*2
VCE = 1 V, IC = 150 mA
2
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Maximum Collector Dissipation Curve
600
400
200
0 50 100 150
Ambient Temperature Ta (°C)
1,000
300
Typical Transfer Characteristics
VCE = 1 V
100
30
10
3
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
2SD655
Typical Output Characteristics
50
0.04
40 0.035
0.03
30 0.025
0.02
20 0.015
0.01
10
0.005 mA
IB = 0
0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
10,000
3,000
1,000
DC Current Transfer Ratio vs.
Collector Current
VCE = 1 V
Pulse
300
100
30
10
1 3 10 30 100 300 1,000
Collector Current IC (mA)
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2SD655
Collector to Emitter Saturation Voltage vs.
Collector Current
3.0
IC = 10 IB
1.0
0.3
0.1
0.03
0.01
0.003
3
10 30 100 300 1,000 3,000
Collector Current IC (mA)
3,000
1,000
Gain Bandwidth Product vs.
Collector Current
VCE = 1 V
300
100
30
10
3
0.3 1.0 3
10 30 100 300
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
50
f = 1 MHz
20 IE = 0
10
5
2
1
12
5 10 20
50
Collector to Base Voltage VCB (V)
4
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