D468 Datasheet PDF - Hitachi Semiconductor

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D468
Hitachi Semiconductor

Part Number D468
Description 2SD468
Page 6 Pages


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2SD468
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB562
Outline
TO-92MOD
3
2
1
1. Emitter
2. Collector
3. Base



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Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
25
20
5
1.0
1.5
0.9
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
25
Collector to emitter breakdown V(BR)CEO
voltage
20
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
hFE*1
VCE(sat)
85
0.2
Base to emitter voltage
VBE — 0.79
Gain bandwidth product
fT
— 190
Collector output capacitance Cob — 22
Notes: 1. The 2SD468 is grouped by hFE as follows.
2. Pulse test
BC
85 to170
120 to 240
Max
1.0
240
0.5
1.0
Unit
V
V
V
µA
V
V
MHz
pF
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 2 V, IC = 0.5 A*2
IC = 0.8 A, IB = 0.08 A*2
VCE = 2 V, IC = 0.5 A*2
VCE = 2 V, IC = 0.5 A*2
VCB = 10 V, IE = 0, f = 1 MHz
2



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Maximum Collector Dissipation Curve
1.2
0.8
0.4
0 50 100 150
Ambient Temperature Ta (°C)
1,000
300
Typical Transfer Characteristics
VCE = 2 V
Ta = 75°C 25°C
100
30
10
3
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
2SD468
1,000
Typical Output Characteristics
7
800
6
5
600
4
400 3
2
200 1mA
P
C = 0.9 W
IB = 0
0 0.4 0.8 1.2 1.4 1.6
Collector to Emitter Voltage VCE (V)
5,000
2,000
1,000
500
200
100
50
20
10
5
1
DC Current Transfer Ratio vs.
Collector Current
VCE = 2 V
Ta = 75°C
25°C
3 10 30 100 300 1,000
Collector Current IC (mA)
3



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0.25
0.20
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
0.15
0.10
0.05
Ta = 75°C
25°C
0
1 3 10 30 100 300 1,000
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
300
VCE = 2 V
200
100
0
10 30
100 300
1,000
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
200
f = 1 MHz
IE = 0
100
50
20
10
5
12
5 10 20
50
Collector to Base Voltage VCB (V)
4



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