D45H11FP Datasheet PDF - STMicroelectronics

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D45H11FP
STMicroelectronics

Part Number D45H11FP
Description Complementary power transistors
Page 9 Pages


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D44H11FP
D45H11FP
Complementary power transistors
Features
Low collector-emitter saturation voltage
Fast switching speed
Applications
Power amplifier
Switching circuits
Description
These low voltage transistors are housed in fully
isolated TO-220FP packages and form a
complementary pair. They are manufactured in
multi epitaxial planar technology for general
purpose in linear and switching applications.
.
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
D44H11FP
D44H11FP
D45H11FP
D45H11FP
Polarity
NPN
PNP
Package
TO-220FP
TO-220FP
Packaging
Tube
Tube
March 2011
Doc ID 16096 Rev 3
1/9
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9



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Absolute maximum ratings
1 Absolute maximum ratings
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
VCEO
VEBO
IC
ICM
PTOT
TSTG
TJ
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current
Total dissipation at Tcase = 25 °C
Storage temperature
Max. operating junction temperature
For PNP types voltage and current values are negative.
Table 3. Thermal data
Symbol
Parameter
RthJC
RthJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
D44H11FP, D45H11FP
Value
80
5
10
20
36
-55 to 150
150
Unit
V
V
A
A
W
°C
°C
Value
3.5
62.5
Unit
°C/W
°C/W
2/9 Doc ID 16096 Rev 3



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D44H11FP, D45H11FP
2 Electrical characteristics
Electrical characteristics
Note:
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
IC = 30 mA
80 -
V
ICES
Collector cut-off current
(VBE = 0)
VCE = 80 V
- 10 µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
- 50 µA
VCE(sat)(1)
Collector-emitter saturation
voltage
IC = 8 A
IB = 0.4 A
- 1V
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 8 A
IB = 0.8 A
- 1.5 V
hFE(1)
DC current gain
IC = 2 A_
IC = 4 A_ _
1. Pulse test: pulse duration 300 µs, duty cycle 2 %.
VCE = 1 V
VCE = 1 V
60
40
-
-
For PNP types voltage and current values are negative.
Doc ID 16096 Rev 3
3/9



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Electrical characteristics
D44H11FP, D45H11FP
2.1 Electrical characteristics (curves)
Figure 2. DC current gain (NPN)
H&%
4* #
4* #
!-V

4*  #
Figure 3. DC current gain (PNP)
H&%
4* #
4* #
!-V

4*  #


6#%6

)#!
Figure 4. Saturation voltage (NPN)
6SAT
6

H&%
!-V

 6"%SAT



6#%SAT



)#!


6#% 6

)#!
Figure 5. Saturation voltage (PNP)
9VDW
9

K)( 
!-V

 9%( VDW



9&( VDW



,& $
4/9 Doc ID 16096 Rev 3



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