D1768S Datasheet PDF - Rohm


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D1768S
Rohm

Part Number D1768S
Description 2SD1768S
Page 4 Pages

D1768S datasheet pdf
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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F
!Features
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!Structure
Epitaxial planer type
NPN siilcon transistor
!External dimensions (Units : mm)
2SD1898
4.5+−00..21
1.6±0.1
1.5−+00..12
ROHM : MPT3
EIAJ : SC-62
2SD1733
6.5±0.2
5.1+−00..21
C0.5
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4−+00..015
Abbreviated symbol : DF
2SD1768S
2.3+−00..21
0.5±0.1
4±0.2
(1) Base
(2) Collector
(3) Emitter
2±0.2
0.55±0.1
1.0±0.2
0.45+−00..1055
2.5
+0.4
0.1
5
(1) (2) (3)
0.5 0.45−+00..0155
ROHM : CPT3
EIAJ : SC-63
2SD1863
6.8±0.2
(1) Base
(2) Collector
(3) Emitter
2.5±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1381F
7.8±0.2
3.2±0.2
Front φ3.3
Back φ3.19
1.75
1.6
0.95
C0.7
0.8
2.3±0.5
2.3±0.5 0.7±0.1
1.76±0.5
(1) (2) (3)
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
ROHM : TO-126FP
(1) Emitter
(2) Collector
(3) Base
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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
2SD1898
IC
1
2
0.5
2
2SD1733
Collector power
dissipation
2SD1768S
PC
1
10
0.3
2SD1863
2SD1381F
1
1.2
5
Junction temperature
Tj 150
Storage temperature
Tstg
55∼+150
1 Pw=20ms, duty=1 / 2
2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
3 When mounted on a 40×40×0.7mm ceramic board.
Unit
V
V
V
A (DC)
A (Pulse) 1
W 3
W (Tc=25˚C)
W 2
W (Tc=25˚C)
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
2SD1863
DC current 2SD1733, 2SD1898
transfer ratio 2SD1768S
hFE
2SD1381F
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Output capacitance
Cob
* Measured using pulse current
Min.
100
80
5
180
82
120
82
Typ.
0.15
100
20
Max.
1
1
390
390
390
270
0.4
Unit
VI
V
V
µA
µA
V
MHz
pF
C=50µA
IC=1mA
IE=50µA
VCB=80V
VEB=4V
Conditions
VCE=3V, IC=0.5A
IC/IB=500mA/20mA
VCE=10V, IE=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz



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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Packaging specifications and hFE
Type
2SD1898
2SD1733
2SD1768S
2SD1863
2SD1381F
Package
Code
hFE Basic ordering unit (pieces)
PQR
PQR
QR
R
PQ
T100
1000
Taping
TL TP
2500 5000
−−
−−
−−
TV2
2500
Bulk
2000
hFE values are classified as follows :
Item P Q R
hFE 82~180 120~270 180~390
!Electrical characteristic curves
1000
Ta=25˚C
VCE=5V
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
1.0 6mA
5mA
0.8 4mA
3mA
0.6
2mA
0.4
1mA
0.2
0 IB=0mA
0 2 4 6 8 10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
1000
100
Ta=25˚C
VCE=3V
1V
0
0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current
Ta=25˚C
2.0
1.0
0.5
0.2
0.1
0.05
IC/IB=20/1
10/1
0.02
0.01
0
10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
Ta=25˚C
500 VCE=5V
200
100
50
20
10
5
2
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs.
emitter current
1000
100
Ta=25˚C
f=1MHz
IE=0A
Ic=0A
10
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage



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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
10
5
2 Ic Max (Pulse)
1 DC
500m
200m
100m
50m
Ta=25˚C
Single
non-repetitive
pulse
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2
5 10 20 50100 2005001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe operating area
(2SD1863)
10
5
2
1
500m
Ic Max (Pulse)
DC
200m
100m
50m
Ta=25˚C
Single
non-repetitive
pulse
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2
5 10 20 50100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
(2SD1898)
10
5
2 Ic Max (Pulse)
1 DC
500m
Ta=45˚C
Single
non-repetitive
pulse
200m
100m
50m
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2 5 10 20 50100 2005001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
(2SD1381F)




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