D1062 Datasheet PDF - SavantIC

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D1062
SavantIC

Part Number D1062
Description 2SD1062
Page 4 Pages


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SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
www.dat·aLsohewet4cuo.clloemctor saturation voltage
·Complement to type 2SB826
·Wide area of safe operation
APPLICATIONS
·Relay drivers,
·High-speed inverters,
·Converters
·General high-current switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SD1062
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
50
6
12
15
40
150
-55~150
UNIT
V
V
V
A
A
W
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1062
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=<
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A, IB=0.3A
ICBO
IEBO
hFE-1
hFE-2
fT
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
VCB=40V;IE=0
VEB=4V; IC=0
IC=1A ; VCE=2V
IC=5A ; VCE=2V
IC=1A ; VCE=5V
Switching times
ton Turn-on time
ts Storage time
IC=5.0A IB1=- IB2=0.5A
tf Fall time
hFE-1 classifications
QRS
70-140 100-200 140-280
MIN TYP. MAX UNIT
50 V
60 V
6V
0.4 V
0.1 mA
0.1 mA
70 280
30
10 MHz
0.10 µs
0.05 µs
1.20 µs
2
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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
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Product Specification
2SD1062
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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SavantIC Semiconductor
Silicon NPN Power Transistors
www.datasheet4u.com
Product Specification
2SD1062
4
Free Datasheet http://www.datasheet-pdf.com/



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