D1046 Datasheet PDF - Sanyo Semicon Device

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D1046
Sanyo Semicon Device

Part Number D1046
Description 2SD1046
Page 4 Pages


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Ordering number:ENN677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output
Large Power Switching Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of built-in ballast resistance.
· Goode dependence of fT on current and good HF
characteristic.
Package Dimensions
unit:mm
2022A
[2SB816/2SD1046]
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
0.6
( ) : 2SB816
Specifications
123
0.6
5.45 5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
www.DaEtalSehceterti4cUa.lcoCmharacteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=()80V, IE=0
VEB=()4V, IC=0
VCE=()5V, IC=()1A
VCE=()5V, IC=()5A
VCE=()5V, IC=()1A
Output Capacitance
Cob VCB=()10V, f=1MHz
* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
(–)150
(–)120
(–)6
(–)8
(–)12
80
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
()0.1 mA
()0.1 mA
60* 200*
20
15 MHz
(220)
pF
160 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/4017KI/6284KI, MT No.677–1/4



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2SB816/2SD1046
Continued from preceding page.
Parameter
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
Conditions
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=()5V, IC=()1A
IC=()5A, IB=()0.5A
IC=()5mA, IE=0
IC=()5mA, RBE=
IC=()50mA, RBE=
IE=()5mA, IC=0
ton See specified test circuit.
tf See specified test circuit.
tstg See specified test circuit.
Swicthing Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
INPUT
VR
200
51
RB
1
+
1µF
RL
20
+
1µF
VBE= --2V
VCC=20V
IC=10IB1= --10IB2=1A
(For PNP, the polarity is reversed.)
Ratings
min typ
()150
()120
()120
()6
1.0
(0.22)
0.22
(0.37)
1.02
(0.93)
6.66
max
1.5
2.0
Unit
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
IC -- VCE
--8
--7 --200mA --160mA
--6 --120mA
--80mA
--5
www.DataSheet4U.com
--4
--40mA
2SB816
--3
--20mA
--2
--1
0 IB=0
0 --10 --20 --30 --40
Collector-to-Emitter Voltage, VCE – V ITR08404
--6
2SB816
IC -- VBE
VCE= --5V
--5
IC -- VCE
8
2SD1046
7 160mA
6 120mA
5
40mA
4
3 20mA
2
1
0 IB=0
0 10 20 30 40
Collector-to-Emitter Voltage, VCE – V ITR08405
6 IC -- VBE
2SD1046
VCE=5V
5
--4 4
--3 3
--2 2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Base-to-Emitter Voltage, VBE – V ITR08406
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-to-Emitter Voltage, VBE – V ITR08407
No.677–2/4



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2SB816/2SD1046
fT -- IC
5
2SB816
fT -- IC
5
2SD1046
3
VCE= --5V
3
VCE=5V
22
10
7
5
3
2
1.0
--0.1
1000
7
5
3
2
23
5 7 --1.0
23
Collector Current, IC – A
hFE -- IC
5 7 --10
ITR08408
2SB816
VCE= --5V
100
7
5
3
2
10
--0.1
2
1000
7
5
23
5 7 --1.0
23
5 7 --10
2
Collector Current, IC – A
ITR08410
Cob -- VCB
f2=S1BM8H16z
f=1MHz
www.DataSheet43U.com
2
100
7
5
3
2
--1.0
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.1
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR08412
VCE(sat) -- IC
2SB816
IC / IB=10
23
5 7 --1.0
23
Collector Current, IC – A
5 7 --10
ITR08414
10
7
5
3
2
1.0
0.1
1000
7
5
3
2
23
5 7 1.0
23
Collector Current, IC – A
hFE -- IC
5 7 10
ITR08409
2SD1046
VCE=5V
100
7
5
3
2
10
0.1
2
1000
7
5
3
2
23
5 7 1.0
23
5 7 10
2
Collector Current, IC – A
ITR08411
Cob -- VCB
2f=S1DM10H4z6
f=1MHz
100
7
5
3
2
1.0
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR08413
VCE(sat) -- IC
2SD1046
IC / IB=10
23
5 7 1.0
23
Collector Current, IC – A
5 7 10
ITR08415
No.677–3/4



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2SB816/2SD1046
VBE(sat) -- IC
5
2SB816
3 IC / IB=10
2
5
3
2
--10 10
77
55
33
22
--1.0
7
5
--0.1
2
23
5 7 --1.0
23
Collector Current, IC – A
ASO
5 7 --10
ITR08416
10 ICP=12A
7 IC=8A
5
3
2
DC opera1t0io0nm1s0ms 1ms
1.0
7
5
3
2 2SB816 / 2SD1046
0.1 (For PNP, minus sign is omitted.)
5 7 10
23
5
7 100
2
Collector-to-Emitter Voltage, VCE – V ITR08418
1.0
7
5
0.1
VBE(sat) -- IC
2SD1046
IC / IB=10
23
5 7 1.0
23
Collector Current, IC – A
5 7 10
ITR08417
Specifications of any and all SANYO products described or contained herein stipulate the performance,
www.DataSheet4Uc.choarmacteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.677–4/4



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