D1029UK Datasheet PDF - Seme LAB

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D1029UK
Seme LAB

Part Number D1029UK
Description METAL GATE RF SILICON FET
Page 4 Pages


D1029UK datasheet pdf
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TetraFET
D1029UK
MECHANICAL DATA
C
(2 pls)
HD
1
B
2
5
E
(4 pls)
F
I
3
4
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C 45°
D 9.78 0.13
E 5.71 0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I 22.22 MAX
J 0.13 0.02
K 2.72 0.13
M 1.70 0.13
N 5.08 0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
350W – 28V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
438W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
35A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.12/00



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D1029UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
DrainSource Breakdown
Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS
VGS(th)
gfs
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
GPS
h
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 7A
TOTAL DEVICE
PO = 350W
VDS = 28V
IDQ = 2A
f = 175MHz
1
5.6
13
65
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 28V VGS = 5V f = 1MHz
Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
7 mA
7 mA
7V
S
dB
%
420 pF
210 pF
17.5 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 0.4°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.12/00



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D1029UK
 
 
 
 
3RXW 
 *DLQ
: 
 G%
 I 0+]
 ,GT $
 9GV 9



 
          
3LQ:
3RXW
JDLQ
Figure 1
Output Power and Gain vs. Input Power
 
 
 
 
3RXW 
: 


I 0+]
,GT $
9GV 9
 'UDLQ(IILFLHQF\
 


 

          
3LQ:
3RXW
'UDLQ(IILFLHQF\
Figure 2
Output Power and Efficiency vs. Input Power


,0' 
G%F




9GV 9
,GT $
I 0+]
I 0+]
       
3RXW:3(3
Figure 3
IMD3 vs. Output Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175
225
ZWS ZWL
2.1 + j1.9 2.8 + j2.4
1.8 - j0.5 2.9 + j0.7
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.12/00



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D1029UK
G a te -B ia s
100n
T2
10k
1n 100k
L1
D 1029U K
1n
L2
12
1n
T4
100n
28V
1000u
820K
680pF
1u
T1
2 -1 8 p F
T6
9 0 p F 2 -1 8 p F
47pF
1u
T3
680pF
D 1029U K
T5
175MHz Test Fixture
T1, 2, 3,
T4,5
T6
L1
L2
7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1
2 hole core
14cm Storm Products EXE18 19/30 S1TW coaxial cable
11cm Storm Products EXE18 19/30 S1TW coaxial cable
6 turns 1.2mm dia wire, 5mm internal diameter
1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.12/00



D1029UK datasheet pdf
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