D1018 Datasheet PDF - Seme LAB

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D1018
Seme LAB

Part Number D1018
Description METAL GATE RF SILICON FET
Page 2 Pages


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TetraFET
D1018UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
B
A
E
C (2 pls)
K 12 34
FG
87 65
J
Typ .
D
M
Q
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
PIN 1
PIN 3
PIN 5
PIN 7
PI N O H
DD
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
SOURCE (COMMON) PIN 6
GATE 1
PIN 8
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
DIM mm
A 9.14
B 12.70
C 45°
D 6.86
E 0.76
F 9.78
G 19.05
H 4.19
I 3.17
J 1.52R
K 1.65R
M 16.51
N 22.86
O 0.13
P 6.35
Q 10.77
Tol. Inches Tol.
0.13 0.360 0.005
0.13 0.500 0.005
5° 45° 5°
0.13 0.270 0.005
0.13 0.030 0.005
0.13 0.385 0.005
0.25 0.750 0.010
0.13 0.165 0.005
0.13 0.125 0.005
0.13 0.060R 0.005
0.13 0.065R 0.005
0.13 0.650 0.005
0.13 0.900 0.005
0.02 0.005 0.001
0.64 0.250 0.025
0.13 0.424 0.005
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
250W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95

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