D1006UK Datasheet PDF - Seme LAB

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D1006UK
Seme LAB

Part Number D1006UK
Description METAL GATE RF SILICON FET
Page 4 Pages


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TetraFET
D1006UK
MECHANICAL DATA
B
CA
E 123
FG
654
J
D
H
M
QN
PIN 1
PIN 3
PIN 5
SOURCE
SOURCE
GATE
DIM mm
A 9.09
B 19.3
C 45°
D 5.71
E 1.65R
F 9.78
G 20.32
H 19.30
J 1.52R
K 10.77
M 22.86
N 3.17
O 0.13
P 4.19
Q 6.35
K OP
DV
PIN 2
PIN 4
PIN 6
DRAIN
SOURCE
SOURCE
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
Inches
0.358
0.760
45°
0.225
0.065R
0.385
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
120W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 14 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
220W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
30A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00

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D1006UK METAL GATE RF SILICON FET D1006UK
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