D1004 Datasheet PDF - Seme LAB

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D1004
Seme LAB

Part Number D1004
Description METAL GATE RF SILICON FET
Page 4 Pages


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TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D
(2 pls)
C
E
B 12 3
A
54
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 175MHz
SINGLE ENDED
PIN 1
PIN 3
PIN 5
H
I
FM
K
DT
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
JN
GATE
SOURCE (COMMON)
DIM mm
A 6.35 DIA
B 3.17 DIA
C 18.41
D 5.46
E 5.21
F 7.62
G 21.59
H 3.94
I 12.70
J 0.13
K 24.76
M 2.59
N 4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



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D1004UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 80W
VDS = 28V
f = 175MHz
VDS = 0
VDS = VGS
ID = 4A
IDQ = 0.4A
1
3.2
16
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
4 mA
1 µA
7V
S
dB
%
240 pF
120 pF
10 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



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D1004UK
150 80
125 70
100
Pout
W
75
50
25
VDS = 28V
IDQ = 0.4A
f = 175MHz
60
Efficiency
50
%
40
30
0 20
012345678
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-20
-25
IMD -30
dBc
-35
-40
VDS = 28V
f1 = 175.0MHz
f2 = 175.1MHz
IDQ = 0.4A
-45
10 20 30 40 50 60 70 80 90
Pout W PEP
IMD3
Figure 3 – IMD vs. Output Power.
150
125
100
Pout
W
75
50
25
0
0
VDS = 28V
IDQ = 0.4A
f = 175MHz
12345
Pin W
67
Pout
Gain
22
20
18
Gain
16
dB
14
12
10
8
Figure 2 – Power Output & Gain
vs. Power Input.
D1004UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
ZS
ZL
175MHz 2.2 + j1.9 3.2 - j0.5
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



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D1004UK
Gate-Bias
10k
10nF
1-70pF
T1
5.1nF
10k
L1
1-70pF
T2
D1004K
8 x5 mm
contact pad
8 x5 mm
contact pad
12
L4
L3
5.1nF
L2
100nF
T3
1-70pF
+28V
22µF
1-70pF
T1 7.5mm
T2 6mm
T3 8mm
D1004UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W=4.4mm
L1 Hairpin loop 16swg 13mm dia
L2 Hairpin loop 16swg 11mm dia
L3 10 turns 18swg enamelled copper wire, 4mm i.d.
L4 12 turns 18swg enamelled copper wire on 22.7mm
o.d. ferrite core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



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