D1003UK Datasheet PDF - Seme LAB

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D1003UK
Seme LAB

Part Number D1003UK
Description METAL GATE RF SILICON FET
Page 4 Pages


D1003UK datasheet pdf
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MECHANICAL DATA
A
B
12
4
M
3
C
D
E
F
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
DM
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C 45°
D 6.35
E 3.17 Dia.
F 5.71
G 12.7 Dia.
H 6.60
I 0.13
J 4.32
K 3.17
M 26.16
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia.
0.225
0.500 Dia.
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1003UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
117W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



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D1003UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 60W
VDS = 28V
f = 175MHz
VDS = 0
VDS = VGS
ID = 3A
IDQ = 0.3A
1
2.4
16
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
180 pF
90 pF
7.5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



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D1003UK
140 80
120 70
100 60
Pout 80
50 Drain Efficiency
W 60
40 %
40
VDS = 28V
30
20
IDQ = 0.3A
20
f = 175MHz
0 10
012345678
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3 -25
dBc -30
-35
-40
-45
-50
0
VDS = 28V
f1 = 175.0MHz
f2 = 175.1MHz
20 40 60 80 100 120
Pout W PEP
Idq = 0.3A
Idq = 2A
Figure 3 – IMD vs. Output Power.
140 17
120 16
100 15
Pout 80
14 Gain
W 60
13 dB
40 VDS = 28V
12
20 IDQ = 0.3A
f = 175MHz
11
0 10
012345678
Pin W
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
D1003UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
ZS
ZL
175MHz 2.0 – j4.3 3.7 – j4.5
Typical S Parameters
! VDS = 28V, IDQ = 0.3A
# MHZ S MA R 50
!Freq
MHz
70
100
150
200
250
300
350
400
450
500
S11
mag ang
0.83 -156.8
0.87 -163.3
0.91 -171.0
0.93 -177.6
0.95 177.6
0.97 173.6
0.96 168.6
0.98 165.0
0.98 161.9
0.97 159.3
S21
mag
6.9
4.3
2.3
1.4
0.9
0.7
0.5
0.4
0.3
0.3
S12
ang mag ang
59.9 0.018 -16.7
46.9 0.012 -15.5
31.5 0.007 37.1
22.6 0.013 81.0
14.3 0.022 86.6
10.5 0.032 86.9
4.0 0.039 80.0
3.9 0.048 80.0
2.9 0.053 77.5
2.1 0.064 74.8
S22
mag ang
0.65 -137.0
0.75 -147.2
0.84 -159.7
0.90 -168.8
0.93 -175.0
0.95 179.5
0.96 175.3
0.98 172.0
0.98 169.8
0.97 166.5
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



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D1003UK
Gate-Bias
5-57pF
T1
5-57pF
T2
10k
10nF
10K
L1
D1003UK
7 x 7 mm
contact pad
L3
L2
7 x 7mm
contact pad
+28V
1nF 10nF 1µF
22µF
5-57pF
T3 T4
5-57pF
T1 8mm
T2 22mm
T3 18mm
T4 4.5mm
D1003UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W= 4.4mm
L1 Hairpin loop 16swg 15.5mm dia.
L2 Hairpin loop 16swg 10mm dia.
L3 11 turns 18swg enamelled copper wire, 10mm i. d.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



D1003UK datasheet pdf
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D1003UK pdf
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D1003UK METAL GATE RF SILICON FET D1003UK
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