D1002UK Datasheet PDF - Seme LAB

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D1002UK
Seme LAB

Part Number D1002UK
Description METAL GATE RF SILICON FET
Page 4 Pages


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MECHANICAL DATA
A
B
C
1
4
M
2
3
F
D
E
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
DA
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C 45°
D 6.35
E 3.17
F 5.71
G 9.52
H 6.60
I 0.13
J 4.32
K 2.54
M 20.32
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1002UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
87W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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D1002UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 40W
VDS = 28V
f = 175MHz
VDS = 0
VDS = VGS
ID = 2A
IDQ = 0.2A
1
1.6
16
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
2 mA
1 µA
7V
S
dB
%
120 pF
60 pF
5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 2.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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D1002UK
80 80
70 70
60 60
Pout
W
50
40
30
20
10
f1 = 175.0MHz
Idq = 0.2A
VDS = 28V
50
Drain Efficiency
40
%
30
20
10
00
012345678
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3 -25
dBc -30
-35
-40
-45
-50
0
f1 = 175.0MHz
f2 = 175.1MHz
VDS = 28V
5 10 15 20 25 30 35 40 45 50 55 60 65
Pout W PEP
Idq = 0.2A
Idq = 1A
Figure 3 – IMD vs. Output Power.
80 17
70 16
60
Pout
W
50
40
30
f1 = 175.0MHz
Idq = 0.2A
VDS = 28V
15
14
Gain
13
dB
12
20 11
10 10
09
012345678
Pin W
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
D1002UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175MHz
ZS ZL
ΩΩ
3.8 + j6.5 4.6 + j0.4
Typical S Parameters
! Vds=28V
Idq=0.2A
# MHZ S MA R 50
!Freq
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S11
mag ang
0.76 -144
0.79 -155
0.84 -163
0.87 -169
0.90 -176
0.92 177
0.94 170
0.96 163
0.97 156
0.98 150
0.98 144
0.98 141
S21
mag ang
15.6 86
7.1 61
4.2 43
2.7 33
1.9 23
1.5 20
1.1 11
0.9 6
0.7 -2
0.6 -8
0.4 -12
0.4 -14
S12
mag
0.026
0.021
0.012
0.009
0.016
0.025
0.033
0.046
0.051
0.062
0.068
0.078
ang
1
-9
-3
47
76
87
85
82
78
76
74
67
S22
mag ang
0.58 -119
0.66 -132
0.74 -144
0.81 -154
0.85 -163
0.88 -172
0.91 -180
0.94 172
0.96 165
0.98 157
0.98 152
0.98 148
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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D1002UK
10-30pF
Gate-Bias
L1
T1
10-30pF
15
10K
10nF
10K
D1001UK
9 x 6 mm
contact pad
L2
T3
T2
9 x 6mm
contact
pad
4.7pF
L4
+28V
100nF 10nF 1nF 10uF
L3
T4
16-100pF
16-100pF
T1 10mm
T2 13mm
T3 12mm
T4 4mm
D1002UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
L1 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L2 10 turns 19swg enamelled copper wire, 6mm i.d.
L3 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L4 13.5 turns 19swg enamelled copper wire on
Siemens B64920A618X830 ferrite core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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