D1001UK Datasheet PDF - Seme LAB

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D1001UK
Seme LAB

Part Number D1001UK
Description GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED
Page 4 Pages


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MECHANICAL DATA
A
B
C
1
4
M
2
3
F
D
E
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
DA
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C 45°
D 6.35
E 3.17
F 5.71
G 9.52
H 6.60
I 0.13
J 4.32
K 2.54
M 20.32
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1001UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
50W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
9/98



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D1001UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 20W
VDS = 28V
f = 175MHz
VDS = 0
VDS = VGS
ID = 1A
IDQ = 0.1A
1
0.8
16
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60 pF
30 pF
2.5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 3.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
9/98



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D1001UK
P out
W
45
40
35
30
25
20
15
10
5
0
0
90
80
70
60
50 Efficiency
40 %
VDS = 28V
IDQ = 0.1A
f = 175MHz
30
20
10
0.25 0.5 0.75 1 1.25 1.5 1.75
P in W
Pout
Drain Efficiency
0
2
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3 -25
dBc
-30
-35
-40
-45
0
VDS = 28V
f1 = 175.0MHz
f2 = 175.1MHz
5 10 15 20 25 30 35 40
P out W PEP
IDQ = 0.1A
IDQ = 0.5A
Figure 3 – IMD vs. Output Power.
45
40
35
30
Pout 25
W 20
15
10
5
0
0
VDS = 28V
IDQ = 0.1A
f = 175MHz
0.25 0.5 0.75 1 1.25 1.5 1.75
Pin W
Pout
Gain
19
18
17
16
15 Gain
14 dB
13
12
11
10
2
Figure 2 – Power Output & Gain
vs. Power Input.
D1001UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175MHz
ZS
5 + j14
ZL
12 – j14
Typical S Parameters
! VDS = 28V, IDQ = 0.1A
# MHZ S MA R 50
!Freq
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S11
mag ang
0.780 -116
0.775 -135
0.795 -149
0.826 -159
0.853 -169
0.878 -179
0.903 171
0.923 161
0.944 151
0.963 142
0.978 136
0.985 131
S21
mag
18
9.312
6.077
4.193
3.216
2.566
1.991
1.655
1.322
1.121
0.899
0.762
ang
112
85
68
53
43
35
23
18
9
4
-2
-7
S12
mag
0.034
0.030
0.022
0.017
0.023
0.039
0.052
0.070
0.080
0.098
0.108
0.119
ang
25
11
14
44
74
89
86
84
80
76
72
66
S22
mag ang
0.642 -85
0.577 -103
0.613 -116
0.669 -128
0.715 -139
0.759 -150
0.801 -161
0.839 -173
0.878 177
0.914 167
0.945 159
0.966 153
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
9/98



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D1001UK
10-30pF
Gate-Bias
T1
10-30pF
L1
15
10K
10nF
10K
9 x 6 mm
contact pad
D1001UK
T2
9 x 6mm
contact
pad
L2
T3
4.7pF
L4
+28V
100nF
10nF
1nF
10uF
L3
T4
16-100pF
16-100pF
T1 10mm
T2 13mm
T3 12mm
T4 4mm
D1001UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
L1 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L2 10 turns 19swg enamelled copper wire, 6mm i.d.
L3 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L4 13.5 turns 19swg enamelled copper wire on
Siemens B64920A618X830 ferrite core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
9/98



D1001UK datasheet pdf
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D1001UK pdf
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D1001UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED D1001UK
Seme LAB
D1001UK pdf

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