CXG1176UR Datasheet PDF - Sony

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CXG1176UR
Sony

Part Number CXG1176UR
Description High Power DPDT Switch with Logic Control
Page 4 Pages


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CXG1176URwww.DataSheet4U.com
High Power DPDT Switch with Logic Control
Description
This IC can be used in wireless communication
systems, for example, W-CDMA handsets.
The IC has on-chip logic for operation with 2 CMOS
control inputs.
The Sony JPHEMT process is used for low insertion
loss and on-chip logic circuit.
Features
Low insertion loss
2 CMOS compatible control line
Small package size: 12-pin UQFN
Applications
Antenna switch for cellular handsets
Dual-Band W-CDMA
Structure
GaAs JPHEMT MMIC
Absolute Maximum Ratings (Ta = 25°C)
Bias voltage
VDD
7
Control voltage
Vctl 5
Operating temperature Topr –35 to +85
Storage temperature Tstg –65 to +150
V
V
°C
°C
12 pin UQFN (Plastic)
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E04910-PS



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Block Diagram and Recommended Circuit
RF2
CRF
GND
RF3
CRF
CXG1176UR
www.DataSheet4U.com
GND
654
F3 F4
73
GND
RF1
F1 F5
CRF
8
F2 F6
CRF
2
RF4
GND
9
1 GND
10 11 12
Cbypass
(100pF)
VDD
CTLA
CTLB
When using this IC, the following external components should be used:
CRF: This capacitor is used for RF decoupling and must be used for all applications.
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
Truth Table
State CTLA CTLB ON State F1 F2 F3 F4 F5 F6
1 L L RF4 – RF3 OFF OFF ON OFF OFF ON
2 L H RF4 – RF2 OFF OFF OFF ON ON OFF
3 H L RF1 – RF3 OFF ON ON OFF OFF OFF
4 H H RF1 – RF2 ON OFF OFF ON OFF OFF
–2–



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DC Bias Conditions
Item
Vctl (H)
Vctl (L)
VDD
Min.
2.0
0
2.5
Typ.
2.85
2.85
(Ta = 25°C)
Max.
3.6
0.4
3.6
Unit
V
V
V
CXG1176UR
www.DataSheet4U.com
Electrical Characteristics
(Ta = 25°C)
Item Symbol State
Condition
Min. Typ. Max. Unit
Insertion loss
IL
830 to 885MHz
1920 to 2170MHz
0.25 0.45 dB
0.35 0.55 dB
Isolation
ISO.
830 to 885MHz
1920 to 2170MHz
20 25
15 20
dB
dB
VSWR
Switching speed
ACLR
Harmonics
VSWR
TSW
ACLR1
ACLR2
2fo
3fo
50
±5MHz
±10MHz
1
1
1
1
1.2 1.5 —
5 10 µs
–60 –50 dBc
–65 –55 dBc
–75 –60 dBc
–75 –60 dBc
Bias current
IDD
VDD = 2.85V
80 150 µA
Control current Ictl
Vctl (H) = 2.85V
15 25 µA
1 Pin = 25dBm, 0/2.85V control, VDD = 2.85V, 830 to 840MHz, 1920 to 1980MHz
Measurement system noise level: ACLR (±5MHz) < –60dBc, (±10MHz) < –65dBc, 2nd Harmonics < –90dBc,
3rd Harmonics < –90dBc
–3–



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Package Outline
Unit: mm
CXG1176UR
www.DataSheet4U.com
12PIN UQFN (PLASTIC)
2.0 0.55 ± 0.05
9
10
7
6
x4
0.1 S A-B C
0.4 ± 0.1
0.6
4-R0.2
C
AB
12
1
4
3
PIN 1 INDEX
0.26
0.18
0.4
0.07
0.25
0.05 M S A-B C
S
Solder Plating
+ 0.09
0.14 – 0.03
0.05 S
+ 0.09
0.25 – 0.03
S
TERMINAL SECTION
Note:Cutting burr of lead are 0.05mm MAX.
SONY CODE
EIAJ CODE
JEDEC CODE
UQFN-12P-01
PACKAGE STRUCTURE
PACKAGE MATERIAL EPOXY RESIN
LEAD TREATMENT
SOLDER PLATING
LEAD MATERIAL
COPPER ALLOY
PACKAGE MASS
0.01g
LEAD PLATING SPECIFICATIONS
ITEM
LEAD MATERIAL
SOLDER COMPOSITION
PLATING THICKNESS
SPEC.
COPPER ALLOY
Sn-Bi Bi:1-4wt%
5-18µm
–4–
Sony Corporation



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