CLA50E1200TC Datasheet PDF - IXYS

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CLA50E1200TC
IXYS

Part Number CLA50E1200TC
Description High Efficiency Thyristor
Page 5 Pages


CLA50E1200TC datasheet pdf
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High Efficiency Thyristor
Single Thyristor
Part number
CLA50E1200TC
CLA50E1200TC
V=RRM
I=TAV
VT
=
1200 V
50 A
1.27 V
21
3
Backside: anode
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-268AA (D3Pak)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121221b
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CLA50E1200TC
Thyristor
Symbol Definition
Conditions
V RSM/DSM
V RRM/DRM
IR/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt) cr
(dv/dt) cr
VGT
I GT
VGD
I GD
IL
IH
t gd
tq
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 50 A
IT = 100 A
IT = 50 A
IT = 100 A
average forward current
TC = 125°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150°C; f = 50 Hz
repetitive, IT = 150 A
tP = 200 µs; diG/dt =0 .3 A/µs;
IAG =0 .3 ; VD = VDRM
non-repet., IT = 50 A
VD = VDRM
T=VJ 150°C
R GK = ; method 1 (linear voltage rise)
VD= 6 V
TVJ = 25°C
T=VJ -40°C
VD= 6 V
TVJ = 25°C
T=VJ -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25°C
IG = 0.3A; diG/dt =0 .3 A/µs
VD= 6 VRGK =
T=VJ 25°C
VD = ½ VDRM
T=VJ 25°C
IGA = 0.3 ; diG/dt =0 .3 A/µs
VR = 100 V; IT =5 0 A; VD = VDRM T=VJ 150°C
di/dt = 10 A/µs; dv/dt = 20 V/µs; tp = 200 µs
Ratings
min. typ. max. Unit
1300 V
1200 V
50 µA
4 mA
1.32 V
1.60 V
1.27 V
1.65 V
50 A
79 A
0.88 V
7.7 m
0.25 K/W
0.15 K/W
500 W
650 A
700 A
555 A
595 A
2.12 kA²s
2.04 kA²s
1.54 kA²s
1.48 kA²s
25 pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
1000 V/µs
1.5 V
1.6 V
50 mA
80 mA
0.2 V
3m A
125 mA
100 mA
2µ s
200 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121221b



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Package TO-268AA (D3Pak)
Symbol Definition
I RMS
Tstg
T VJ
Weight
RMS current
storage temperature
virtual junction temperature
FC mounting force with clip
Conditions
per terminal
CLA50E1200TC
Ratings
min. typ. max.
70
-55 150
-40 150
5
20 120
Unit
A
°C
°C
g
N
Product Marking
Logo
Part No.
Date Code
Assembly Code
Assembly Line
IXYS
YYWW Z
abcd
Part number
C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
50 = Current Rating [A]
E = Single Thyristor
1200 = Reverse Voltage [V]
TC = TO-268AA (D3Pak) (2)
Ordering
Standard
Part Number
CLA50E1200TC
Marking on Product
CLA50E1200TC
Delivery Mode
Tube
Quantity Code No.
30 502708
Similar Part
CLA50E1200HB
Package
TO-247AD (3)
Voltage class
1200
Equivalent Circuits for Simulation
I V0
R0
Thyristor
V 0 max
R0 max
threshold voltage
slope resistance *
0.88
5.2
* on die level
T VJ = 150°C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121221b



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Outlines TO-268AA (D3Pak)
CLA50E1200TC
Dim. Millimeter
min max
A 4.90 5.10
A1 2.70 2.90
A2 0.02 0.25
b 1.15 1.45
b2 1.90 2.10
C 0.40 0.65
C2 1.45 1.60
D 13.80 14.00
D1 12.40 12.70
E 15.85 16.05
E1 13.30 13.60
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
min max
0.193 0.201
0.106 0.114
0.001 0.100
0.045 0.057
0.075 0.083
0.016 0.026
0.057 0.063
0.543 0.551
0.488 0.500
0.624 0.632
0.524 0.535
0.215 BSC
0.736 0.752
0.094 0.106
0.047 0.055
0.039 0.045
0.100 BSC
0.150 0.161
21
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121221b



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IXYS
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