CJQ4953 Datasheet PDF - JCET

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CJQ4953
JCET

Part Number CJQ4953
Description P-Channel MOSFET
Page 5 Pages


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4953 P-Channel 30-V(D-S) MOSFET
V(BR)DSS
-30V
RDS(on)MAX
60mΩ@-10V 
90mΩ@ -4.5V  
ID
-5A 
SOP8
MARKING:
Q4953= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Equivalent Circuit
D1 D1 D2 D2
8 76 5
1 23 4
S1 G1 S2 G2
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ( t10s)
Power Dissipation ( t10s)
Thermal Resistance from Junction to Ambient ( t10s)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
TSTG
Value
-30
±20
-5
1.25
100
150
-55~+150
Unit
V
A
W
/W
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026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-threshold voltage
Symbol
Test Condition
V(BR)DSS
VGS(th)
VGS =0V, ID =-250µA
VDS =VGS, ID =-250µA
Min Typ Max Units
-30
-1.0 -1.5
V
V
Gate-body leakage
IGSS VDS =0V, VGS =±20V
±100 nA
Zero gate voltage drain current
Drain-source on-resistancea
Forward transconductancea
Diode forward voltagea
Dynamicb
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
IDSS
RDS(on)
gfs
VSD
VDS =-30V, VGS =0V
VGS =-10V, ID =-4.9A
VGS =-4.5V, ID =-3.7A
VDS =-10V, ID =-4.9A
IS=-1.7A,VGS=0V
-1 µA
50 60 m
66 90
6.0 S
-1.2 V
Qg
Qgs
Qgd
td(on)
VDS =-15V,VGS =-10V,ID =-4.9A
25
4 nC
2
15
Rise time
Turn-off delay time
tr
td(off)
VDD=-15V,RL=15, ID -1A,
VGEN=-10V,RG=6
20
nS
80
Fall time
tf
Notes :
a. Pulse Test : Pulse width300µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
40
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7\SLFDO&KDUDFWHULVWLFV
-25
Ta=25
Pulsed
-20
-15
-10
Output Characteristics
-10V
-8V
-5V
VGS=-4.5V
VGS=-4.0V
VGS=-3.5V
-5
-0
-0
100
80
60
40
-1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE VDS (V)
-5
RDS(ON) —— ID
Ta=25
Pulsed
VGS=-4.5V
VGS=-10V
20
-0 -2 -4 -6 -8
DRAIN CURRENT ID (A)
-10
Ta=25
Pulsed
-1
IS —— VSD
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.2
-0.4 -0.6 -0.8 -1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
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-10
-1.2
3
-5
Ta=25
Pulsed
-4
Transfer Characteristics
-3
-2
-1
-0
-0
140
120
100
80
60
40
20
-2
-1 -2 -3
GATE TO SOURCE VOLTAGE VGS (V)
-4
RDS(ON) —— VGS
Ta=25
Pulsed
ID=-4.3A
-4 -6 -8
GATE TO SOURCE VOLTAGE VGS (V)
-10
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SOP8 Package Outline Dimensions
SOP8 Suggested Pad Layout
Symbol
A
A1
A2
b
c
D
e
E
E1
L
θ
Dimensions In Millimeters
Min Max
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.800
5.000
1.270(BSC)
5.800
6.200
3.800
4.000
0.400
1.270
0° 8°
Dimensions In Inches
Min Max
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.007
0.010
0.189
0.197
0.050(BSC)
0.228
0.244
0.150
0.157
0.016
0.050
0° 8°
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4
G,Mar,2016



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JCET
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