CJQ05N10 Datasheet PDF - JCET

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CJQ05N10
JCET

Part Number CJQ05N10
Description Dual N-channel MOSFET
Page 5 Pages


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ05N10 Dual N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
100V
140mΩ@10V 
5A
 
 
 
DESCRIPTION
The CJQ05N10 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge .This device is suitable for use
in a wide variety of applications.
SOP8
FEATURES
z Lead free product is acquired
z Special process technology for high ESD capability
z High density cell design for ultra low RDS(on)
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
MARKING:
APPLICATION
z Power switching application
z Hard switching and high frequency circuits
z Uninterruptible power supply
Equivalent Circuit
Q05N10= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings (Ta=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation(note 1)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
100
±20
5
24
1.4
89
150
-55~+150
www.cj-elec.com
1
Unit
V
V
A
A
W
/W
D,Mar,2016



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026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =100V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
Drain-source on-resistance (note 3)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =5A
Forward transconductance (note 3)
Diode forward voltage (note 3)
gFS VDS =5V, ID =2.9A
VSD IS=5A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=10V,VDS=30V,
RGEN=2.5, ID =2A, RL=15
Turn-off fall time
tf
Total gate charge
Gate-source Charge
Gate-drain Charge
Qg
Qgs VDS =30V,VGS =10V,ID =3A
Qgd
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t10s.
3. Pulse Test : Pulse Width300µs, Duty Cycle2%.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
100 V
1 µA
±100 nA
1 1.8 2 V
103 140 m
8S
1.2 V
690 pF
120 pF
90 pF
11 ns
7.4 ns
35 ns
9.1 ns
15.5 nC
3.2 nC
4.7 nC
ZZZFMHOHFFRP
 D,Mar,2016



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7\SLFDO&KDUDFWHULVWLFV
20
Pulsed
15
Output Characteristics
VGS=10V
VGS=4.5V
10
VGS=3.5V
5 VGS=3V
VGS=2.5V
0
01234
DRAIN TO SOURCE VOLTAGE VDS (V)
5
R ——
DS(ON)
I
D
120
Ta=25
Pulsed
115
110 VGS=4.5V
105
100
VGS=10V
95
90
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN CURRENT I (A)
D
10
I
S
——
V
SD
1
0.1
Ta=100
0.01
Ta=25
1E-3
1E-4
0
300 600 900 1200
SOURCE TO DRAIN VOLTAGE VSD (mV)
1500
14
VDS=10V
Pulsed
12
Transfer Characteristics
10
8
6
4
Ta=100
2 Ta=25
0
01234
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
——
V
GS
500
400
ID=5A
300
Ta=100
200
100
0
0
Ta=25
5 10 15
GATE TO SOURCE VOLTAGE VGS (V)
5
20
Threshold Voltage
2.5
2.0
ID=250uA
1.5
1.0
0.5
25
50 75 100
JUNCTION TEMPERATURE TJ ()
125
ZZZFMHOHFFRP
3  D,Mar,2016



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SOP8 Package Outline Dimensions
SOP8 Suggested Pad Layout
Symbol
A
A1
A2
b
c
D
e
E
E1
L
θ
Dimensions In Millimeters
Min Max
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.800
5.000
1.270(BSC)
5.800
6.200
3.800
4.000
0.400
1.270
0° 8°
Dimensions In Inches
Min Max
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.007
0.010
0.189
0.197
0.050(BSC)
0.228
0.244
0.150
0.157
0.016
0.050
0° 8°
www.cj-elec.com
4
D,Mar,2016



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