CGH40010 Datasheet PDF - Cree

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CGH40010
Cree

Part Number CGH40010
Description GaN HEMT
Page 12 Pages


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PRELIMINARY
CGH40010
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40010, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
www.DataSheetth4Ue.cCoGmH40010 ideal for linear and compressed amplifier circuits.
The transistor is available in both screw-down, flange and solder-
down, pill packages.
PaPckNa’sg:eCTGyHpe4s0:041400F1&66C,G&H4404001109P6
FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 13 W typical P3dB
65 % Efficiency at P3dB
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
IGMAX
TS
RθJC
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1 Measured for the CGH40010F at PDISS = 14 W.
Electrical Characteristics (TC = 25˚C)
Rating
84
-10, +2
-55, +150
175
4.0
245
5.0
Units
Volts
Volts
˚C
˚C
mA
˚C
˚C/W
Characteristics
DC Characteristics4
Symbol
Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.0
-2.5
Gate Quiescent Voltage
VGS(Q)
-2.0
Saturated Drain Current
IDS 2.4 2.7
Drain-Source Breakdown Voltage
VBR
84
100
Case Operating Temperature
TC -10 –
Screw Torque
T––
RF Characteristics (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain
GSS
13.5
14.5
Power Output at 3 dB
Compression
P3dB
10 12.5
Drain Efficiency1,2
η 55 65
Max.
-1.8
+105
60
Units
VDC
VDC
A
VDC
˚C
in-oz
dB
W
%
Output Mismatch Stress
VSWR
TBD
Y
Dynamic Characteristics
Input Capacitance
CGS – 5.00 –
pF
Output Capacitance
CDS – 1.32 –
pF
Feedback Capacitance
CGD – 0.43 –
pF
Notes:
1 Drain Efficiency = POUT / PDC
2 When tuned for best efficiency (see the applications chart in this data sheet).
3 When tuned for best P1dB (see the applications chart in this data sheet).
4 Measured on wafer prior to packaging.
Conditions
VDS = 10 V, ID = 3.6 mA
VDS = 28 V, ID = 200 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 3.6 mA
Reference 440166 Package Revision 3
VDD = 28 V, IDQ = 200 mA
VDD = 28 V, IDQ = 200 mA
VDD = 28 V, IDQ = 200 mA, P3dB
No damage at all phase angles,
VDD = 28 V, IDQ = 200 mA,
POUT = 12 W CW
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH40010 Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless



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Typical Performance
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Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for Drain Efficiency at 2.0 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 2.0 GHz
18 80
70
17
60
16
50
15 40
30
14
20
13
10
12 0
26 28 30 32 34 36 38 40 42
Pout (dBm)
Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for Drain Efficiency at 3.6 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
16 80
72
15
64
56
14
48
13 40
32
12
24
16
11
8
10 0
23 25 27 29 31 33 35 37 39 41 43
Pout (dBm)
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH40010 Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless



No Preview Available !

Typical Performance
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Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for P1 Power at 3.6 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
14 60
54
13
48
42
12
36
11 30
24
10
18
12
9
6
80
23 25 27 29 31 33 35 37 39 41 43
Pout (dBm)
Simulated Maximum Stable Gain, Maximum Available
Gain and K Factor of the CGH40010F
VDD = 28 V, IDQ = 200 mA
30 1.5
25 1.13
20 0.75
15 0.375
10
0.5
1.5 2.5
Frequency (GHz)
3.5
0
4.5
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH40010 Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless



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