CGH27030F Datasheet PDF - Cree

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CGH27030F
Cree

Part Number CGH27030F
Description GaN HEMT
Page 8 Pages


CGH27030F datasheet pdf
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PRELIMINARY
CGH27030F
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH27030F ideal for 2.3-
2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
www.DataSheeitn4Ua.ccoemramic/metal flange package.
PackagPeNT:yCpGe:H2474003106F6
Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Small Signal Gain
14.1
13.8
13.5
13.2
13.0
Units
dB
EVM @ 21 dBm
2.3 2.1 1.7 1.7 1.9
%
EVM @ 36 dBm
1.7 1.7 1.8 1.8 2.0
%
Drain Efficiency @ 36 dBm
26.0
26.2
26.0
25.8
25.7
%
Input Return Loss
7.9 7.2 6.6 6.4 7.2
dB
Note:
Measured in the CGH27030F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
2.3 - 2.9 GHz Operation
>13.5 dB Small Signal Gain
26 % Drain Efficiency at 4 W POUT
3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM
WiMAX Fixed Access 802.16-2004 OFDM
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
TS
RθJC
Note:
www.Data1ShMeeeat4sUu.croemd for the CGH27030F at 14 W PDISS
Electrical Characteristics (TC = 25˚C)
Rating
84
-10, +2
-55, +150
175
245
3.7
Units
Volts
Volts
˚C
˚C
˚C
˚C/W
Characteristics
DC Characteristics4
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.6
-2.5
VDC
VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
-2.6
VDC
VDS = 28 V, ID = 120 mA
Saturated Drain Current
IDS 4.8 5.4
-
A VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR
84 100
VDC
VGS = -8 V, ID = 7.2 mA
Case Operating Temperature
TC -10
-
+105
˚C
Screw Torque
T
-
-
60
in-oz
Reference 440166 Package Revision 3
RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain
GSS 13.5
dB VDD = 28 V, IDQ = 120 mA
Drain Efficiency1
Back-Off Error Vector Magnitude
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
η
EVM1
EVM2
VSWR
-
26.0
1.9
1.8
TBD
-
% VDD = 28 V, IDQ = 120 mA, PAVE = 4 W
%
VPADVDE
=
=
28
21
Vd,BImDQ
=
120
mA,
VDD = 28 V, IDQ = 120 mA, PAVE = 4 W
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 120 mA
Input Capacitance
CGS 9.3
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 2.0
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.9
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Drain Efficiency = POUT / PDC
2 Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59,
Coding Type RS-CC, Coding Rate Type 2/3.
3 Measured in the CGH27030F-TB test fixture.
4 Measured on wafer prior to packaging.
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
 CGH27030F Rev 1.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless



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Typical WiMAX Performance
www.DataSheet4U.com
Typical EVM and Efficiency vs Frequency of
CGH27030F in Broadband Amplifier Circuit CGH27030F-TB
5.0 30
4.5
EVM 2.25
EVM 2.3
4.0
EVM 2.4
EVM 2.6
EVM 2.5
EVM 2.7
Drain Effciency
3.5
27
24
21
3.0 18
2.5 15
2.0 12
1.5 9
1.0 6
0.5 3
0.0 0
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Average Output Power
Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Gain and Return Loss vs Frequency of CGH27030F in
Broadband Amplifier Circuit CGH27030F-TB
VDD = 28 V, IDQ = 120 mA, OFDM BW = 3.5 MHz
20 0
S21
18
S11
-1
16 -2
14 -3
12 -4
10 -5
8 -6
6 -7
4 -8
2 -9
0 -10
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
Frequency (GHz)
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
 CGH27030F Rev 1.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless



No Preview Available !

CGH27030F-TB Demonstration Amplifier Circuit Schematic
www.DataSheet4U.com
CGH27030F-TB Demonstration Amplifier Circuit Outline
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
 CGH27030F Rev 1.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless



CGH27030F datasheet pdf
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