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Part Number

CFY30

Manufacturer Siemens Semiconductor Group
Short Description GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
Long Description GaAs FET CFY 30 ______________________________________________________________________________________________________

Datasheet : CFY30



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  • CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
  • CFY25-20 HiRel X-Band GaAs MOSFET
  • CFY25-20P HiRel X-Band GaAs MOSFET
  • CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
  • CFY25-23 HiRel X-Band GaAs MOSFET
  • CFY25-23P HiRel X-Band GaAs MOSFET
  • CFY25-P HiRel X-Band GaAs MOSFET
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  • CFY27-38 HiRel Ku-Band GaAs General Purpose MESFET
  • CFY27-P HiRel Ku-Band GaAs General Purpose MESFET
  • CFY30 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
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  • CFY66 HiRel K-Band GaAs Super Low Noise HEMT
  • CFY66-08 HiRel K-Band GaAs Super Low Noise HEMT
  • CFY66-08P HiRel K-Band GaAs Super Low Noise HEMT
  • CFY66-10 HiRel K-Band GaAs Super Low Noise HEMT
  • CFY66-10P HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67 HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-06 HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-08 HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-08P HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-10 HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-10P HiRel K-Band GaAs Super Low Noise HEMT
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