CEM8206 Datasheet PDF - Chino-Excel Technology


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CEM8206
Chino-Excel Technology

Part Number CEM8206
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Page 5 Pages

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CEM8206
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 6A , RDS(ON)=20m @VGS=4.5V.
RDS(ON)=30m @VGS=2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
D1 D1 D2 D2
87 65
5
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa
-Pulsed
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
Ć12
Ć6
Ć24
6
2
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
62.5
C/W
5-73



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CEM8206
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol Condition
Min TypC Max Unit
5 OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS VGS = 0V, ID = 250µA
IDSS VDS = 20V, VGS = 0V
20
V
1 µA
Gate-Body Leakage
ON CHARACTERISTICSb
IGSS VGS =Ć12V, VDS = 0V
Ć100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA 0.5
1.5 V
Drain-Source On-State Resistance
RDS(ON)
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
17 20 m
23 30 m
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICSc
ID(ON)
gFS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
VDS = 5V, VGS = 4.5V
VDS =10V, ID = 6.0A
VDS =8V, VGS = 0V
f =1.0MHZ
10
7 16
950
450
135
A
S
PF
PF
PF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 10V,
tr
ID = 1A,
VGS = 4.5V,
tD(OFF) RGEN = 6
tf
20 40 ns
20 40 ns
72 130 ns
20 40 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS =10V, ID = 6A,
VGS =4.5V
Qgd
15 20 nC
3.4 nC
1.2 nC
5-74



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CEM8206
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD VGS = 0V, Is =1.7A
Min TypC Max Unit
0.75 1.2 V
Notes
a.Surface Mounted on FR4 Board, t ś10sec.
b.Pulse Test:Pulse Widthś300ijs, Duty Cycle ś 2%.
c.Guaranteed by design, not subject to production testing.
20
VGS=4.5,3.5,2.5V
16 VGS=2.0V
12
25
20
15
8 10
4
VGS=1.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
5
Tj=125 C
0
0.0 0.5
1
25 C
-55 C
1.5 2 2.5 3
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2400
2000
1600
1200
Ciss
800
Coss
400
Crss
0
0 2 4 6 8 10 12
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
1.80
1.60
ID=6.0A
VGS=4.5V
1.40
1.20
1.00
0.80
0.60
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation with
Temperature
5
5-75



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CEM8206
1.60
1.40
VDS=VGS
ID=250ӴA
1.20
1.15
ID=250ӴA
1.10
1.05
1.00
5
0.80
1.00
0.95
0.60
0.40
-50 -25 0 25 50 75 100 125 150
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
30
25
20
15
10
VDS=10V
5
0
0 3 6 9 12 15
IDS, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Drain Current
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
50
10
1
0.1
0.4 0.6 0.8 1.0
1.2
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5
VDS=4.5V
4 ID=6A
3
2
1
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge (nC)
Figure 9. Gate Charge
5-76
101
RDS(ON) Limit
100
1s 100m1s0ms1ms
DC10s
10-1
TA=25 C
Tj=150 C
-2 Single Pulse
10
10-1
101
100
101
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area




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